Manufacturing method for a semiconductor apparatus
AssigneeCanon Kabushiki Kaisha
InventorYasushi Nakata
Life of this patent
Estimating the term…
Abstract
A manufacturing method includes forming a wiring layer including a first wiring connected to a gate electrode of a semiconductor element, a second wiring having an area in an orthogonal projection onto a plane including a surface of the semiconductor substrate larger than the first wiring, and a third wiring connected to a protective element, from a conductive material film by etching using plasma on the conductive material film. In the forming the wiring layer, the etching is conducted in a manner that a part that becomes the first wiring of the conductive material film is separated from the part that becomes the second wiring of the conductive material film earlier than a part that becomes the third wiring of the conductive material film.
Claims14
A manufacturing method for a semiconductor apparatus, the method comprising:
- preparing a semiconductor substrate having a gate insulating film, a gate electrode provided on the gate insulating film, a protective element, and a conductive material film provided above the gate insulating film, the gate electrode, and the protective element;
- and
- forming a wiring layer including a first wiring connected to the gate electrode, a second wiring having an area in an orthogonal projection onto a plane including a surface of the semiconductor substrate larger than the first wiring, and a third wiring connected to the protective element, from the conductive material film by etching using plasma on the conductive material film,
- wherein the etching is conducted to separate a part that becomes the first wiring of the conductive material film from a part that becomes the second wiring of the conductive material film earlier than a part that becomes the third wiring of the conductive material film in the forming the wiring layer.
Dependencies are inferred from the claim text.