Method of manufacturing semiconductor packaging
AssigneeChipMOS Technologies Inc.
InventorGENG SHIN SHEN
Life of this patent
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Abstract
The present disclosure is related to a method of providing a die structure for semiconductor packaging. The method includes providing a substrate with a bonding pad; forming a patterned mask layer on the substrate; forming an opening on the mask layer; depositing a conductive layer in the opening; forming a cap layer on the conductive layer, and removing the mask layer. The cap layer forming step allows the contacting area between the cap layer and the conductive layer to be substantially equal to the top surface area of the conductive layer by reflowing solder material prior to the removal of the mask layer.
Claims11
A method of providing a semiconductor structure, the method comprising the steps of:
- providing a substrate with at least a bonding pad on the substrate;
- forming a patterned mask layer on the substrate, wherein the patterned mask layer includes an opening which exposes at least a part of the bonding pad;
- depositing a conductive layer in the opening, wherein a height difference exists between the top surface of the conductive layer and the top surface of the adjacent mask layer, and the top surface of the conductive layer is lower than the top surface of the adjacent mask layer;
- forming a cap layer on the conductive layer;
- and
- removing the patterned mask layer;
- wherein the cap layer forming step allows the contacting area between the cap layer and the conductive layer to be substantially equal to the top surface area of the conductive layer.
Dependencies are inferred from the claim text.