Methods Of Doping Substrates With ALD
AssigneeApplied Materials, Inc.
InventorsAneesh Nainani, Mathew Abraham, Er-Xuan Ping
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Abstract
Provided are methods of doping substrates and making doped semiconductor features. An exemplary method includes providing a substrate having at least one feature having an aspect ratio; depositing a layer of dopants onto the substrate, the layer of dopants having a shape conforming to the at least one feature. A dielectric layer is deposited onto the layer of dopants, the dielectric layer having a shape conforming to the layer of dopants. The dielectric layer is annealed to diffuse the dopants into the substrate.
Claims20
A method of doping a semiconductor feature, the method comprising
- providing a substrate having at least one feature having an aspect ratio;
- depositing a layer of dopants onto the substrate, the layer of dopants having a shape conforming to the at least one feature;
- depositing a dielectric layer onto the layer of dopants, the dielectric layer having a shape conforming to the layer of dopants;
- and
- annealing the dielectric layer to diffuse the dopants into the substrate.
The method of claim 10, wherein each monolayer is deposited by a single atomic layer deposition cycle.
A method of doping FinFET transistor, the method comprising
- depositing a layer of dopants onto a substrate;
- depositing a dielectric layer onto the layer of dopants;
- implanting silicon or argon into the dielectric layer prior to annealing the dielectric layer;
- and
- annealing the dielectric to diffuse the dopants into the substrate.
A method of making a doped FinFET transistor, the method comprising
- depositing more than one monolayer of dopants onto a substrate, wherein the dopants comprise one or more of boron, phosphorous, arsenic, silicon, or combinations thereof;
- depositing a dielectric layer onto the layer of dopants at a temperature of less than about 300° C., wherein deposition of the layer of dopants and deposition of the dielectric layer occur without a break in vacuum, and wherein the dielectric layer comprises SiN, SiO2, Al2O3, or HfO2, and is deposited via atomic layer deposition, chemical vapor deposition, or sputtering;
- implanting silicon or argon into the dielectric layer prior to annealing the dielectric layer;
- and
- annealing the dielectric to diffuse the dopants into the substrate.
Dependencies are inferred from the claim text.