Method of manufacturing semiconductor element

A method of manufacturing a semiconductor element comprising the steps of:

• bonding a substrate for transferring and a functional layer that is formed on a substrate for forming a functional layer with a temporary fixing layer interposed therebetween;
• removing the substrate for forming a functional layer to expose the functional layer;
• bonding a final substrate to the exposed functional layer;
• and
• separating the temporary fixing layer and the substrate for transferring from the functional layer, wherein
• the temporary fixing layer has (A) a shear adhering strength to a silicon wafer, after it is kept at 200° C. for 1 minute, of 0.25 kg/5×5 mm or more at 200° C., and a shear adhering strength to a silicon wafer, after it is kept at a temperature within a range of higher than 200° C. and 500° C. or lower for 3 minutes, of less than 0.25 kg/5×5 mm at the temperature within the range, or has (B) a weight loss rate, after it is immersed in N-methyl-2-pyrrolidone at 50° C. for 60 seconds and dried at 150° C. for 30 minutes, of 1.0% by weight or more.