Method of fabricating semiconductor device

A method for fabricating a semiconductor device, comprising:

• forming a gate dielectric layer over a substrate;
• forming a metal layer over the gate dielectric layer;
• forming a capping layer over the metal layer;
• densifying the metal layer through a heat treatment;
• removing the capping layer;
• and
• forming a gate pattern by etching the metal layer and the gate dielectric layer.

A method for fabricating a capacitor, comprising:

• forming a lower electrode;
• forming a dielectric layer over the lower electrode;
• forming an upper electrode metal layer over the dielectric layer;
• forming an upper electrode capping layer over the upper electrode metal layer;
• densifying the upper electrode metal layer through a first heat treatment;
• removing the upper electrode capping layer;
• and
• forming an upper electrode by etching the upper electrode metal layer.