Semiconductor device and manufacturing method thereof
AssigneeSemiconductor Manufacturing International (Beijing) Corporation
InventorJinhua Liu
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Abstract
A semiconductor device and its manufacturing method are disclosed. The semiconductor device comprises a gate, and source and drain regions on opposite sides of the gate, wherein a portion of a gate dielectric layer located above the channel region is thinner than a portion of the gate dielectric layer located at the overlap region of the drain and the gate. The thicker first thickness portion may ensure that the device can endure a higher voltage at the drain to gate region, while the thinner second thickness portion may ensure excellent performance of the device.
Claims8
A method of manufacturing a semiconductor device, comprising the following steps:
- providing a semiconductor substrate, forming a patterned dielectric layer on a substrate, the patterned dielectric layer having an opening to expose a portion of an upper surface of the substrate;
- forming a first gate dielectric layer and a mask layer on the substrate;
- etching the mask layer to retain at least a portion of the mask layer on the first gate dielectric layer within the opening;
- etching the first gate dielectric layer using the residual of the mask layer to expose a portion of the substrate within the opening;
- forming a second gate dielectric layer on the exposed substrate portion, wherein the thickness of the second gate dielectric layer is less than that of the first gate dielectric layer.
Dependencies are inferred from the claim text.