Transistor and Method for Forming the Same
AssigneeInstitute of Microelectronics, Chinese Academy of Sciences
InventorsHaizhou Yin, Huilong Zhu, Zhijiong Luo
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Abstract
The present invention relates to a transistor and the method for forming the same. The transistor of the present invention comprises a semiconductor substrate; a gate dielectric layer formed on the semiconductor substrate; a gate formed on the gate dielectric layer; a channel region under the gate dielectric layer; and a source region and a drain region located in the semiconductor substrate and on respective sides of the channel region, wherein at least one of the source and drain regions comprises a set of dislocations that are adjacent to the channel region and arranged in the direction perpendicular to a top surface of the semiconductor substrate, and the set of dislocations comprises at least two dislocations.
Claims10
A method for forming a transistor, comprising:
- forming a gate dielectric layer on a semiconductor substrate;
- forming a gate on the gate dielectric layer;
- performing a first ion implantation with a first implantation depth in a first region and a second region of the semiconductor substrate located in the substrate on respective sides of the gate;
- performing annealing to form a dislocation in each of the first and second regions after the first ion implantation;
- performing a second ion implantation with a second implantation depth smaller than the first implantation depth on one or both of the first and second regions;
- and
- performing annealing after the second ion implantation to form a dislocation in each of the first and second regions.
Dependencies are inferred from the claim text.