Capacitors and Methods of Manufacture Thereof
AssigneeInfineon Technologies AG
InventorsMartin Ostermayr, Richard Lindsay
Life of this patent
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Abstract
Semiconductor devices, capacitors, and methods of manufacture thereof are disclosed. In one embodiment, a method of fabricating a capacitor includes forming a first material over a workpiece, and patterning the first material, forming a first capacitor plate in a first region of the workpiece and forming a first element in a second region of the workpiece. A second material is formed over the workpiece and over the patterned first material. The second material is patterned, forming a capacitor dielectric and a second capacitor plate in the first region of the workpiece over the first capacitor plate and forming a second element in a third region of the workpiece.
Claims20
A method of fabricating a capacitor, the method comprising:
- forming a first material over a workpiece;
- patterning the first material, forming a first capacitor plate in a first region of the workpiece and forming a first element in a second region of the workpiece;
- forming a second material over the workpiece and over the patterned first material;
- and
- patterning the second material, forming a capacitor dielectric and a second capacitor plate in the first region of the workpiece over the first capacitor plate and forming a second element in a third region of the workpiece.
A method of manufacturing a semiconductor device, the method comprising:
- forming a first insulating material over a workpiece;
- forming a first semiconductive material over the first insulating material;
- patterning the first semiconductive material and the first insulating material thereby forming a first capacitor plate in a first region of the workpiece and forming a first element in a second region of the workpiece;
- forming a second insulating material over the first capacitor plate, the first element, and the workpiece;
- forming a conductive material over the second insulating material;
- forming a second semiconductive material over the conductive material;
- and
- patterning the second semiconductive material, the conductive material, and the second insulating material thereby forming a second capacitor plate and a capacitor dielectric over the first capacitor plate, and forming a second element in a third region of the workpiece.
A method of manufacturing a semiconductor device, the method comprising:
- forming a first insulating material over a workpiece;
- forming a first semiconductive material over the first insulating material;
- patterning the first semiconductive material and the first insulating material thereby forming a first capacitor plate in a first region of the workpiece, and forming a first element in a second region of the workpiece;
- forming a second insulating material over the first capacitor plate, the first element, and the workpiece;
- forming a conductive material over the second insulating material, the first region, the second region and a third region;
- forming a second semiconductive material over the conductive material and the insulating material;
- patterning the second semiconductive material, the conductive material, and the second insulating material thereby forming a second capacitor plate and a capacitor dielectric over the first capacitor plate, and forming a second element in the third region of the workpiece;
- and
- patterning the second semiconductive material and the second insulating material thereby forming a third element in a fourth region of the workpiece.
Dependencies are inferred from the claim text.