Group iii nitride semiconductor device, production method therefor, and power converter
AssigneeToyoda Gosei Co., Ltd.
InventorToru OKA
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Abstract
A method for producing a semiconductor device, includes forming a first carrier transport layer including a Group III nitride semiconductor, forming a mask on a region of the first carrier transport layer, selectively re-growing a second carrier transport layer on an unmasked region of the first carrier transport layer, the second carrier transport layer including a Group III nitride semiconductor, and selectively growing a carrier supply layer on the second carrier transport layer, the carrier supply layer including a Group III nitride semiconductor having a bandgap different from that of the Group III nitride semiconductor of the second carrier transport layer.
Claims10
A method for producing a semiconductor device, comprising:
- forming a first carrier transport layer comprising a Group III nitride semiconductor;
- forming a mask on a region of the first carrier transport layer;
- selectively re-growing a second carrier transport layer on an unmasked region of the first carrier transport layer, the second carrier transport layer comprising a Group III nitride semiconductor;
- and
- selectively growing a carrier supply layer on the second carrier transport layer, the carrier supply layer comprising a Group III nitride semiconductor having a bandgap different from that of the Group III nitride semiconductor of the second carrier transport layer.
Dependencies are inferred from the claim text.