US 2014/0004668 A1Published application

Method for manufacturing nitride electronic devices

AssigneeSumitomo Electric Industries, Ltd.

InventorsYu Saitoh, Masaya Okada, Makoto Kiyama

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Abstract

A substrate product is disposed in a growth furnace at time t0, and the substrate temperature is then raised to 950° C. At time t3 after the substrate temperature is sufficiently stable, trimethyl gallium and ammonia are supplied to the growth furnace, to grow an i-GaN film. The substrate temperature reaches 1080° C. at time t5. At time t6 after the substrate temperature is sufficiently stable, trimethyl gallium, trimethyl aluminum and ammonia are supplied to the growth furnace, to grow an i-AlGaN film. Supply of trimethyl gallium and trimethyl aluminum is stopped at time t7 to discontinue film deposition. Quickly thereafter, supply of ammonia and hydrogen to the growth furnace is stopped and supply of nitrogen is initiated, to change the atmosphere of ammonia and hydrogen in a growth furnace chamber to a nitrogen atmosphere. After formation of the nitrogen atmosphere, the substrate temperature starts being lowered at time t8.

A method for manufacturing nitride electronic devices, comprising the steps of:

forming a substrate product by arranging a substrate in a growth furnace, and thereafter, supplying a source gas containing ammonia and a group III element to the growth furnace, to thereby grow, at a growth temperature, a carrier supply layer on a channel layer on a main surface of the substrate;
exposing the substrate product to a predetermined atmosphere at a temperature not higher than the growth temperature after growth of the carrier supply layer is complete;
lowering the temperature of the substrate product in the predetermined atmosphere, and removing thereafter the substrate product from the growth furnace;
and
forming a gate electrode on the carrier supply layer after removing the substrate product,
wherein the channel layer includes a first portion and a second portion, the first portion extends along a first reference plane that is inclined with respect to the main surface of the substrate and a plane perpendicular to a c-axis of the gallium nitride-based semiconductor of the channel layer, and the second portion extends along a second reference plane that is inclined with respect to the first portion,
the carrier supply layer includes a first portion and a second portion, the first portion is grown on the first portion of the channel layer, and the second portion is grown on the second portion of the channel layer,
the gate electrode is formed on the first portion of the carrier supply layer,
an angle formed by a first axis perpendicular to the first reference plane and the c-axis of the gallium nitride-based semiconductor is larger than an angle formed by a second axis perpendicular to the second reference plane and the c-axis of the gallium nitride-based semiconductor,
the band gap of the group III nitride semiconductor of the carrier supply layer is larger than the band gap of the gallium nitride-based semiconductor of the channel layer,
the predetermined atmosphere contains nitrogen but no ammonia,
the channel layer includes a gallium nitride-based semiconductor, and
the carrier supply layer includes a group III nitride semiconductor.

10 more elements

Facts

Application

14/006,307Filed 5 Apr 2011

Published

2 Jan 2014

Term ends

Not estimatedThe source records don’t support an estimate.

Classification12 codes

H10D 30/015
Manufacture or treatment: of FETs having heterojunction interface channels or heterojunction gate electrodes, e.g. HEMT
H10D 30/477
High electron mobility transistors [HEMT] or high hole mobility transistors [HHMT]: vertical HEMTs or vertical HHMTs
H10D 30/478
High electron mobility transistors [HEMT] or high hole mobility transistors [HHMT]: the 2D charge carrier gas being at least partially not…
H10P 14/24
Of semiconductor materials: using chemical vapour deposition [CVD]

Abstract

Claims11