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US 2014/0004666 A1Published application
Passivation of carbon nanotubes with molecular layers
AssigneeInternational Business Machines Corporation
InventorsAaron D. FRANKLIN, Shu-Jen HAN, George S. TULEVSKI
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Abstract
A transistor device is fabricated, in one embodiment, by providing an insulator on a substrate and forming a gate embedded in the insulator. A dielectric material is deposited over the gate and insulator forming a dielectric layer. A channel comprising carbon nanotubes is formed on the dielectric layer over the gate. A self-assembled monolayer is formed over at least the channel.
Claims14
A method for fabricating a transistor device, the method comprising:
- providing an insulator on a substrate;
- forming a gate embedded in the insulator;
- depositing a dielectric material over the gate and insulator forming a dielectric layer;
- forming a channel comprising carbon nanotubes on the dielectric layer over the gate;
- and
- forming a self-assembled monolayer over at least the channel, wherein the self-assembled monolayer is formed over and contacts a top surface of the carbon nanotubes.
3 more elements
Dependencies are inferred from the claim text.