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US 2014/0004653 A1Published application
Pseudo-Schottky photovoltaic cell by wet-printing a conductive paint
AssigneeUnited States of America via Secr. of Navy
InventorsBlaise L. Corbett, William P. Adams, Kevin D. Collier
Life of this patent
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Abstract
Various embodiments relate to a functional low cost photovoltaic (PV) cell (e.g., solar cell) and a method for the large scale production of the device. The manufacturing method to produce a pseudo-Schottky photovoltaic (PSPV) cell, includes depositing a metal contact on a reverse side of the wafer; superposing a mask on an obverse side of the wafer; disposing a conductive paint to the obverse side of the wafer; removing the mask on the obverse side of the wafer; and attaching electrical conduction leads between the paint and the metal contact.
Claims16
A manufacturing method to produce a pseudo-Schottky photovoltaic (PSPV) cell, the method comprising:
- providing a doped silicon wafer having an obverse side and a reverse side;
- sintering the wafer to expose the obverse side in an oven by raising temperature to 220° C. and maintaining for five minutes, thereby producing respective first and second silicon-oxide layer on the obverse and reverse sides of the wafer;
- polishing the first silicon-oxide layer on the obverse side to uniform thickness;
- removing the second silicon-oxide layer on the reverse side;
- applying a first photoresist on the obverse side;
- depositing a metal contact on the reverse side, causing a third silicon-oxide layer on the obverse side;
- applying a second photoresist on the reverse side;
- removing the third silicon-oxide layer on the obverse side;
- sintering the wafer to expose the reverse side in the oven at 90° C. for about ten minutes, thereby causing a fourth silicon-oxide layer on the obverse side;
- removing the first and second photoresists on the respective obverse and reverse sides;
- sintering the wafer to expose the obverse side in the oven raising to 220° C. and maintaining for five minutes;
- superposing a grid mask on the obverse side;
- disposing a conductive paint onto the obverse side;
- removing the grid mask on the obverse side to form a collector grid composed of the conductive paint deposited on the obverse side;
- and
- attaching first and second electrical conduction leads respectively to the collector grid and the metal contact to form the PSPV cell.
13 more elements
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A manufacturing method to produce a pseudo-Schottky photovoltaic (PSPV) cell, the method comprising:
- providing an n+-type doped silicon wafer having an obverse side and a reverse side;
- sintering the wafer to expose the obverse side in an oven by raising temperature to 220° C. and maintaining for five minutes, thereby producing respective first and second silicon-oxide layer on the obverse and reverse sides of the wafer;
- polishing the first silicon-oxide layer on the obverse side to uniform thickness;
- removing the second silicon-oxide layer on the reverse side;
- applying a first photoresist on the obverse side;
- depositing an aluminum contact on the reverse side, causing a third silicon-oxide layer on the obverse side;
- applying a second photoresist on the reverse side;
- removing the third silicon-oxide layer on the obverse side;
- sintering the wafer to expose the reverse side in the oven at 90° C. for about ten minutes, thereby causing a fourth silicon-oxide layer on the obverse side;
- removing the first and second photoresists on the respective obverse and reverse sides;
- sintering the wafer to expose the obverse side in the oven raising to 220° C. and maintaining for five minutes;
- superposing a grid mask on the obverse side;
- disposing a conductive paint onto the obverse side;
- removing the grid mask on the obverse side to form a collector grid composed of the conductive paint deposited on the obverse side;
- and
- attaching first and second electrical conduction leads respectively to the collector grid and the aluminum contact to form the PSPV cell.
13 more elements
A manufacturing method to produce a pseudo-Schottky photovoltaic (PSPV) cell, the method comprising:
- providing an n-type doped silicon wafer having an obverse side and a reverse side;
- sintering the wafer to expose the obverse-side in an oven by raising temperature to 220° C. and maintaining for five minutes, thereby producing respective first and second silicon-oxide layer on the obverse and reverse sides of the wafer;
- polishing the first silicon-oxide layer on the obverse side to uniform thickness;
- removing the second silicon-oxide layer on the reverse side;
- applying a first photoresist on the obverse side;
- depositing metal contact on the reverse side, causing a third silicon-oxide layer on the obverse side;
- applying a second photoresist on the reverse side;
- removing the third silicon-oxide layer on the obverse side;
- sintering the wafer to expose the reverse side in the oven at 90° C. for about ten minutes, thereby causing a fourth silicon-oxide layer on the obverse side;
- removing the first and second photoresists on the respective obverse and reverse sides;
- sintering the wafer to expose the obverse side in the oven raising to 220° C. and maintaining for five minutes;
- superposing a grid mask on the obverse side;
- disposing a conductive paint onto the obverse side;
- removing the grid mask on the obverse side to form a collector grid composed of the conductive paint deposited on the obverse side;
- and
- attaching first and second electrical conduction leads respectively to the collector grid and the aluminum contact to form the PSPV cell.
13 more elements
Dependencies are inferred from the claim text.