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AssigneeInternational Business Machines Corporation
InventorsAnthony J. Annunziata, Michael C. Gaidis
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A method of fabricating a self-aligning magnetic tunnel junction the method includes patterning a lithographic strip on a second magnetic material deposited on a first magnetic material that is disposed on a substrate, forming a top magnetic strip by etching an exposed portion of the second magnetic material, patterning a nanowire and a magnetic reference layer island over the substrate and forming the nanowire and the magnetic reference layer island by etching an exposed portion of the first magnetic layer and an exposed portion of the top magnetic strip, wherein an interface between the magnetic nanowire and the magnetic reference layer island is an magnetic tunnel junction aligned with a width of the nanowire.
A method of fabricating a self-aligning magnetic tunnel junction (MTJ), the method comprising:
The method as claimed 5 wherein the nanowire is the first magnetic material disposed over the substrate and the magnetic reference layer island is the second magnetic material disposed over the first magnetic material.
A method of fabricating a self-aligning magnetic tunnel junction (MTJ), the method comprising:
A method of fabricating a self-aligning magnetic tunnel junction (MTJ), the method comprising:
Dependencies are inferred from the claim text.