Ferroelectric thin film and method for producing same
AssigneeKonica Minolta, Inc.
InventorHideyuki Eguchi
Life of this patent
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Abstract
In order to obtain a ferroelectric thin film having good crystallinity and realizing high piezoelectric properties, and a production method therefor, provided is a ferroelectric thin film constituting a dielectric material having a perovskite structure that comprises Zr and Ti formed on a substrate, wherein a layer having a Zr ratio that is smaller than a predetermined ratio and having good crystallinity and a layer that realizes good piezoelectric properties and has a Zr ratio that is about as great as the predetermined ratio are combined. A production method is also provided.
Claims21
A ferroelectric thin film, comprising:
- a film of a dielectric material having a perovskite structure formed on a base body, wherein
- the dielectric material is made of a composite oxide obtained by adding, as an additive, a metal material other than Pb, Zr, and Ti to PZT, and
- the thin film includes layers different in Zr/Ti ratio, which are a first layer that has a small compounding percentage of Zr and is formed on the base body and a second layer that has a large compounding percentage of Zr and is formed on the first layer.
(canceled)
A ferroelectric thin film, comprising:
- a film of a dielectric material having a perovskite structure formed on a base body, wherein
- the dielectric material is made of a composite oxide obtained by adding, as an additive, a metal material other than Pb, Zr, and Ti to PZT, and
- the thin film includes layers of the composite oxide different in Zr/Ti ratio, which are a first layer of the composite oxide that has a small compounding percentage of Zr and is formed on the base body and a second layer of the composite oxide that has a large compounding percentage of Zr and is formed on the first layer.
Dependencies are inferred from the claim text.