Back to results
US 2014/0004358 A1Published application
Low k carbosilane films
OwnerJames M. Blackwell, David J. Michalakinventors
Life of this patent
Estimating the term…
Abstract
Low k dielectric films/layers can be produced by cross-linking oligomers made from cyclic carbosilane monomers. The films may exhibit high porosity and strong resistance to chemical attack while also exhibiting improved hydrophobicity. Oligomers may be cross-linked in situ after coating on a substrate such as a silicon wafer. Resulting cross-linked layers may be further treated to improve chemical resistance and reduce water uptake.
Claims27
A device comprising:
- a dielectric film disposed on a substrate, the film comprised of cross-linked cyclic carbosilane units having a ring structure including C and Si, wherein at least a first cyclic carbosilane unit is linked to at least four adjacent cyclic carbosilane units.
A device comprising:
- a dielectric film disposed on a substrate, the film comprised of cross-linked cyclic carbosilane units having a ring structure including C and Si, wherein the cross-linked cyclic carbosilane units are capped with Si—H or Si—H2.
A method of making a dielectric film, the method comprising:
- joining a first cyclic carbosilane monomer together with a second cyclic carbosilane monomer different from the first to form a carbosilane oligomer;
- coating the oligomer onto a substrate;
- and
- cross-linking the oligomer to form a hardened dielectric layer.
1 more element
Dependencies are inferred from the claim text.