Nanometric imprint lithography method
AssigneeCommissariat A L'energie Atomique Et Aux Ene Alt
InventorSebastien Pauliac
Life of this patent
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Abstract
A nanoimprint lithography method, including: pressing a mold in a photosensitive resin to form at least one imprint pattern defined by a stamped area and an adjacent area, the adjacent area being less stamped or not stamped at all, and being thicker than the stamped area; and exposure to a certain amount of sunlight. Respective thicknesses of the two areas are defined such that the two areas absorb a different amount of the sunlight and the amount of sunlight provided by the exposure is predetermined so as to be great enough to activate the resin in whichever of the two areas has the greater absorption, and so as not to be great enough to activate the other of the two areas.
Claims21
1-19. (canceled)
A nanometric imprint lithography method comprising:
- a preparation during which a photosensitive resist is disposed on a substrate;
- at least one pressing a mold in the resist to form in the resist at least one imprint pattern delimited at least partly by two adjacent areas, one of the two areas having a thickness less than a thickness of the other one of the two areas;
- exposing at least the two areas during which the two areas receive a same insolation dose;
- and
- wherein the thicknesses of the two areas are defined so that, to be activated, the resist in one of the two areas requires an insolation dose different from the insolation dose necessary for activating the resist in the other one of the two areas, and the insolation dose afforded by the exposure is determined so as to be sufficiently great to activate the resist in only one of the two areas and so as not to be sufficiently great to activate the other one of the two adjacent areas.
A multilayer assembly comprising:
- a substrate covered with a layer of photosensitive resist, the resist having at least one imprint pattern, delimited at least partly by two areas having different thicknesses,
- wherein the thicknesses of the two areas correspond to a maximum and a minimum of an absorption curve of the resist, respectively, according to its thickness.
Dependencies are inferred from the claim text.