Silicon carbide crystal and method of manufacturing silicon carbide crystal

A method of manufacturing a silicon carbide crystal, comprising the steps of:

• preparing powders of silicon carbide for polishing as a first source material;
• growing a first silicon carbide crystal by sublimating said first source material through heating and precipitating a silicon carbide crystal;
• forming a second source material by crushing said first silicon carbide crystal;
• and
• growing a second silicon carbide crystal by sublimating said second source material through heating and precipitating a silicon carbide crystal,
• in said step of forming a second source material, said second source material is formed such that a plurality of peaks of size distribution are present in a range not smaller than 1 μm and not greater than 3 mm and 95% or more particles are present in a range of ±50% from a center of each peak of said size distribution.