Plasma processing apparatus

A plasma processing apparatus in which a high frequency electrode is provided in a processing chamber and, when a plasma process is performed on a target object in the processing chamber, a first high frequency power is applied to a rear surface of the high frequency electrode and a surface of the high frequency electrode is exposed to plasma of a processing gas, the apparatus comprising:

• at least one asymmetry member that causes a non-uniformity of plasma density around the high frequency electrode in an azimuthal direction;
• and
• a plasma density distribution controller that is arranged depending on arrangement of the at least one asymmetry member to suppress the non-uniformity of plasma density around the high frequency electrode in the azimuthal direction,
• wherein the at least one asymmetry member includes a power feed line that is connected to an electrostatic chuck on the surface of the high frequency electrode in an axially asymmetrical manner with respect to the high frequency electrode, and
• wherein the plasma density distribution controller comprises:
• a first conductor which has first and second surfaces facing opposite directions to each other and is electrically connected with the rear surface of the high frequency electrode with respect to the first high frequency power, the first surface facing a portion of the rear surface of the high frequency electrode;
• and
• a second conductor which includes a first connecting portion(s) electrically connected with a portion of the second surface of the first conductor and a second connecting portion electrically connected with a conductive grounding member electrically grounded around the high frequency electrode with respect to the first high frequency power.