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US 2013/0340672 A1Published application
Using boron-containing compounds, gasses and fluids during ammonothermal growth of group-iii nitride crystals
AssigneeThe Regents of the University of California
InventorsSiddha Pimputkar, Derrick S. Kamber, James S. Speck, Shuji Nakamura
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Abstract
Boron-containing compounds, gasses and fluids are used during ammonothermal growth of group-III nitride crystals. Boron-containing compounds are used as impurity getters during the ammonothermal growth of group-III nitride crystals. In addition, a boron-containing gas and/or supercritical fluid is used for enhanced solubility of group-III nitride into said fluid.
Claims5
An apparatus for growing (Al,Ga,In)N crystals, comprising:
- (a) a vessel for containing (Al,Ga,In)N source materials and (Al,Ga,In)N seed crystals;
- (b) wherein the vessel is filled with a solvent for dissolving the (Al,Ga,In)N source materials and the dissolved (Al,Ga,In)N source materials are transported to the (Al,Ga,In)N seed crystals for ammonothermal growth of the (Al,Ga,In)N crystals;
- and
- (c) wherein boron-containing material is placed into the vessel's environment for use as impurity getters during the ammonothermal growth of the (Al,Ga,In)N crystals, and the boron-containing material includes one or more of borane (BH3), diborane (B2H6), borazane (BNH6), borazine (B3N3H6), sodium borohydride (NaBH4), and boron in its elemental form.
1 more element
Dependencies are inferred from the claim text.