High temperature atomic layer deposition of silicon oxide thin films
AssigneeAir Products and Chemicals, Inc.
InventorsHaripin Chandra, Meiliang Wang, Manchao Xiao, Xinjian Lei, Ronald Martin Pearlstein, Mark Leonard O'Neill, Bing Han
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Abstract
Composition(s) and atomic layer deposition (ALD) process(es) for the formation of a silicon oxide containing film at one or more deposition temperature of about 500° C. is disclosed. In one aspect, the composition and process use one or more silicon precursors selected from compounds having the following formulae I, II, described and combinations thereof R1R2mSi(NR3R4)nXp; and I. R1R2mSi(OR3)n(OR4)qXp. II
Claims24
A process to deposit a silicon oxide film onto a substrated comprises steps of:
- a. providing a substrate in a reactor;
- b. introducing into the reactor at least one silicon precursor;
- c. purging reactor with purge gas;
- d. introducing an oxygen source into the reactor;
- and
- e. purging reactor with purge gas;
- and
- wherein steps b through g are repeated until a desired thickness of silicon oxide is deposited;
- and
- wherein the process in conducted at one or more temperatures ranging from 500 to 800° C. and one or more pressures ranging from 50 miliTorr (mT) to 760 Torr.
A process to deposit silicon oxide comprises steps of:
- a. providing a substrate in a reactor;
- b. introducing into the reactor at least one silicon precursor;
- c. purging reactor with purge gas;
- d. introducing an oxygen source into the reactor;
- e. purging reactor with purge gas;
- f. introducing water vapor or OH source into the reactor;
- g. purging reactor with purge gas;
- and
- wherein steps b through g are repeated until desired thickness is deposited;
- wherein process temperature ranges from 500 to 800° C. and pressure ranges from 50 miliTorr (mT) to 760 Torr
A process to deposit silicon oxide comprises steps of:
- a) providing a substrate in a reactor;
- b) introducing into the reactor at least one silicon precursor;
- c) purging reactor with purge gas;
- d) introducing an oxygen source into the reactor;
- e) purging reactor with purge gas;
- and
- steps b through e until desired thickness is deposited;
- wherein process temperature ranges from 500 to 800° C. and pressure ranges from 50 miliTorr (mT) to 760 Torr and the silicon precursor comprises at least one anchoring functionality and a passivating functionality comprising a Si-Me group.
A silicon-containing precursor selected from the group consisting of 2,6-dimethylpiperidinotrimethylsilane, 2,5-dimethylpyrrolidinotrimethylsilane, and 2-methylpyrrolidinotrimethylsilane.
Dependencies are inferred from the claim text.