Niobium and vanadium organometallic precursors for thin film deposition
AssigneeL'Air Liquide, Societe Anonyme pour l'Etude et l'Exploitation des Procedes Georges
InventorsNicolas BLASCO, Antony Correia-Anacleto, Audrey Pinchart, Andreas Zauner
Life of this patent
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Abstract
Compound of the formula Cp(R1)mM(NR22)2(═NR3) (I): wherein: M is a metal independently selected from Vanadium (V) or Niobium (Nb) and m≦5; R1 is an organic ligand, each one independently selected in the group consisting of H, linear or branched hydrocarbyl radical comprising from 1 to 6 carbon atom; R2 is an organic ligand, each one independently selected in the group consisting of H, linear or branched hydrocarbyl radical comprising from 1 to 6 carbon atom; R3 is an organic ligand selected in the group consisting of H, linear or branched hydrocarbyl radical comprising from 1 to 6 carbon atom.
Claims18
A method for forming a metal-containing layer on a substrate, the method comprising the steps of:
- a) providing a vapor comprising at least one precursor compound selected from the group consisting of (Cp)V(=NtBu)(NEt2)2;
- (Cp)V(=NtBu)(NMe2)2;
- (Cp)V(=NtBu)(NEtMe)2;
- (Cp)V(═NiPr)(NEt2)2;
- (Cp)V(═NiPr)(NMe2)2;
- (Cp)V(═NiPr)(NEtMe)2;
- (Cp)V(═NC5H11)(NEt2)2;
- (Cp)V(═NC5H11)(NMe2)2;
- (Cp)V(═NC5H11)(NEtMe)2;
- (Cp)Nb(=NtBu)(NEt2)2;
- (Cp)Nb(=NtBu)(NMe2)2;
- (Cp)Nb(=NtBu)(NEtMe)2;
- (Cp)Nb(═NiPr)(NEt2)2;
- (Cp)Nb(═NiPr)(NMe2)2;
- (Cp)Nb(═NiPr)(NEtMe)2;
- (Cp)Nb(═NC5H11)(NEt2)2;
- (Cp)Nb(═NC5H11)(NMe2)2;
- and (Cp)Nb(═NC5H11)(NEtMe)2;
- b) providing at least one reaction gas selected from the group consisting of hydrogen, hydrogen sulfide, hydrogen selenide, hydrogen telluride, carbon monoxide, ammonia, organic amine, silane, disilane, higher silanes, silylamines, diborane, hydrazine, methylhydrazine, chlorosilane, chloropolysilane, metal alkyl, arsine, phosphine, trialkylboron, oxygen, ozone, water, hydrogen peroxide, nitrous oxide, nitrogen monoxide, nitrogen dioxide, alcohols, plasma comprising fragments of those species, and combinations thereof;
- and
- c) reacting the vapor and the reaction gas with the substrate, according to a deposition process, to form the metal-containing layer on at least one surface of the substrate.
A method of manufacturing a semiconductor structure, comprising the steps of:
- forming a metal-containing layer on the semiconductor substrate by:
- a) providing a vapor comprising at least one precursor compound selected from the group consisting of (Cp)V(=NtBu)(NEt2)2;
- (Cp)V(=NtBu)(NMe2)2;
- (Cp)V(=NtBu)(NEtMe)2;
- (Cp)V(═NiPr)(NEt2)2;
- (Cp)V(═NiPr)(NMe2)2;
- (Cp)V(═NiPr)(NEtMe)2;
- (Cp)V(═NC5H11)(NEt2)2;
- (Cp)V(═NC5H11)(NMe2)2;
- (Cp)V(═NC5H11)(NEtMe)2;
- (Cp)Nb(=NtBu)(NEt2)2;
- (Cp)Nb(=NtBu)(NMe2)2;
- (Cp)Nb(=NtBu)(NEtMe)2;
- (Cp)Nb(═NiPr)(NEt2)2;
- (Cp)Nb(═NiPr)(NMe2)2;
- (Cp)Nb(═NiPr)(NEtMe)2;
- (Cp)Nb(═NC5H11)(NEt2)2;
- (Cp)Nb(═NC5H11)(NMe2)2;
- and (Cp)Nb(═NC5H11)(NEtMe)2;
- b) providing at least one reaction gas selected from the group consisting of hydrogen, hydrogen sulfide, hydrogen selenide, hydrogen telluride, carbon monoxide, ammonia, organic amine, silane, disilane, higher silanes, silylamines, diborane, hydrazine, methylhydrazine, chlorosilane, chloropolysilane, metal alkyl, arsine, phosphine, trialkylboron, oxygen, ozone, water, hydrogen peroxide, nitrous oxide, nitrogen monoxide, nitrogen dioxide, alcohols, plasma comprising fragments of those species, and combinations thereof;
- and
- c) reacting the vapor and the reaction gas with the semiconductor substrate, according to a deposition process, to form the metal-containing layer on at least one surface of the semiconductor substrate.
A compound selected from the group consisting of:
- (Cp)Nb(=NtBu)(NEt2)2
- (Cp)Nb(=NtBu)(NMe2)2
- (Cp)Nb(=NtBu)(N(EtMe)2
Dependencies are inferred from the claim text.