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US 2013/0295718 A1Published application
Thin-film transistor, method of fabricating the thin-film transistor, and display substrate using the thin-film transistor
AssigneeSamsung Display Co., Ltd.
InventorsPil-Sang YUN, Young-Wook Lee, Woo-Geun Lee
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Abstract
An oxide thin-film transistor (TFT) substrate that includes: a substrate, a gate line, a data line, an oxide TFT, and a pixel electrode. An oxide layer of the oxide TFT includes a first region that has semiconductor characteristics and a channel, and a second region that is conductive and surrounds the first region. A portion of the first region is electrically connected to the pixel electrode, and the second region is electrically connected to the data line.
Claims7
A method of fabricating an oxide TFT substrate, the method comprising:
- disposing an oxide layer on a substrate, the oxide layer having a first region and a second region that surrounds the first region;
- making the second region of the oxide layer conductive;
- and
- disposing a pixel electrode on the substrate, so as to contact the first region of the oxide layer.
1 more element
Dependencies are inferred from the claim text.