Liquid crystal display of horizontal electronic field applying type and fabricating method thereof

A method of fabricating an LCD of a horizontal electric field type having a liquid crystal between lower and upper substrates, comprising:

• forming a first conductive pattern group including a gate line, a gate electrode connected to the gate line, a lower gate pad electrode, a common line, a common electrode extended from the common line, a lower common pad electrode connected to the common line on the lower substrate by patterning a first conductive layer;
• forming a gate insulating film on the first conductive pattern group;
• forming a semiconductor pattern on the gate insulating film;
• forming a second conductive pattern group including a data line crossing the gate line to define a pixel area, a source electrode and a lower data pad electrode connected to the data line, a drain electrode opposed to the source electrode and a pixel electrode connected to the drain electrode on the semiconductor pattern by pattering a second conductive layer, the common electrode and the pixel electrode forming a horizontal electric field in the pixel area during an operation of the LCD;
• forming a protective film on the second conductive pattern group;
• forming first to third contact holes for the lower gate pad electrode, the lower common pad electrode and the lower data pad electrode by patterning at least one of the protective film and the gate insulating film using a photo-resist pattern;
• and
• forming a third conductive pattern group including an upper gate pad electrode, an upper common pad electrode and an upper data pad electrode by depositing a third conductive layer on the photo-resist pattern and then by lifting-off the photo-resist pattern, the upper gate pad electrode, the upper common pad electrode and the upper data pad electrode connected to the lower gate pad electrode, the lower common pad electrode and the lower data pad electrode, respectively, via the first to third contact holes.

A method of fabricating a thin film transistor substrate of horizontal electric field applying type, said method comprising:

• a first mask process of forming a gate line, a gate electrode and a lower gate pad electrode connected to the gate line, a common line parallel to the gate line, a lower common pad electrode connected to the common line and a common electrode extended from the common line into a pixel area on a substrate from a first conductive layer;
• a second mask process of entirely coating a gate insulating film, and forming a semiconductor pattern at a desired area of the gate insulating film and forming a data line crossing the gate line and the common line, a source electrode and a lower data pad electrode connected to the data line, a drain electrode opposed to the source electrode and a pixel electrode connected to the drain electrode to form a horizontal electric field along with the common electrode on said semiconductor pattern from a second conductive layer;
• and
• a third mask process of entirely coating the protective film, patterning the protective film along with the gate insulating film to define first to fourth contact holes for exposing the lower gate pad electrode, the lower common pad electrode and a lower data pad electrode, and forming an upper gate pad electrode, an upper common pad electrode and an upper data pad electrode from a third conductive layer within the first to fourth contact holes.