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US 2013/0295699 A1Published application
Method for testing through-silicon-via (tsv) structures
AssigneeUnited Microelectronics Corp.
InventorHung-Ming Liu
Life of this patent
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Abstract
A method for testing TSV structures includes providing a wafer having a front side and a back side, the wafer further comprising a plurality of TSV structures formed therein; thinning the wafer from the back side of the wafer; forming a first under bump metallization layer on the back side of the wafer blanketly; providing a probing card to the front side of the wafer to test the TSV structures; and patterning the first UBM layer.
Claims20
A method for testing through-silicon-via (TSV) structures, comprising:
- providing a wafer having a front side and a back side, the wafer further comprising a plurality of TSV structures formed therein;
- thinning the wafer from the back side of the wafer;
- forming a first under bump metallization (UBM) layer on the back side of the wafer blanketly;
- providing a probing card to the front side of the wafer to test the TSV structures after forming the first UBM layer;
- and
- patterning the first UBM layer after testing the TSV structures.
3 more elements
A method for testing TSV structures, comprising:
- providing a wafer having a front side and a back side, the wafer further comprising a plurality of TSV structures formed therein;
- thinning the wafer from the back side of the wafer;
- forming a plurality of patterned conductive layers on the back side of the wafer, wherein the patterned conductive layers comprise a plurality of function pads and a plurality of non-function pads, each function pad electrically connected to one TSV structure and each non-function pad electrically connected to at least two TSV structures;
- forming a tape on the back side of the wafer to support the wafer;
- and
- providing a probing card to the front side of the wafer to test the TSV structures.
3 more elements
(canceled)
Dependencies are inferred from the claim text.