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Assignee3M Innovative Properties Company
InventorsRavi Palaniswamy, Arokiaraj Jesudoss, Alejandro Aldrin II Agcaoili Narag, James R. White, Fong Liang Tan, Andrew J. Ouderkirk, Justine A. Mooney, Nathan P. Kreutter, Qihong Nie, Jian Xia Gao
Estimating the term…
Provided is a flexible light emitting semiconductor device, such as an LED device, that includes a flexible dielectric layer having first and second major surfaces with a conductive layer on the first major surface and at least one cavity in the first major surface with a conductive layer in the cavity that supports a light emitting semiconductor device. The conductive layer in the cavity is electrically isolated from the second major surface of the dielectric layer.
A flexible article comprising:
The article of 1 wherein the first major surface of the dielectric layer has an array of cavities therein and at least a portion of the cavities are configured to support light emitting semiconductor devices.
The article of 1 wherein at least one cavity contains conductive material in addition to the third conductive layer.
The article of 1 wherein the cavity floor is comprised of a portion of the dielectric layer.
The article of 1 wherein the cavity floor is comprised of a dielectric material different from the dielectric layer material.
The article of 1 wherein the distance between the cavity floor and the second major surface is about 5% to about 75% of the thickness of the dielectric layer.
The article of 1 wherein the distance between the cavity floor and the second major surface is about 5% to about 60% of the thickness of the dielectric layer.
The article of 1 wherein the at least one cavity has walls that slope from the first major surface to the cavity floor at an angle of about 5° to about 60° as measured from the major plane of the dielectric layer.
The article of 1 wherein a light emitting semiconductor device is supported by the third conductive layer in the cavity and is selected from the group consisting of a bare die LES construction, an intermediate LES construction, and a complete packaged LES construction.
The article of 1 wherein the ratio of the footprint area of the light emitting semiconductor device to the area of the cavity floor is about 1:2 to about 1:4.
The article of 1 wherein the ratio of the footprint area of the light emitting semiconductor device to the area of the cavity floor is about 1:3.
The article of 1 wherein the combination of the third conductive layer and conductive material in the cavity has a thickness of about 50 micrometers to about 100 micrometers.
The article of 1 wherein the cavity has an upper portion near the first major surface of the dielectric layer and a lower portion near the second major surface of the dielectric layer and wherein the diameter of the upper portion is greater than the diameter of the lower portion.
The article of 1 further comprising a second polymeric dielectric layer on the first conductive layer, the second polymeric dielectric layer having an opening extending therethrough such that the opening forms an upper portion of the cavity.
Dependencies are inferred from the claim text.