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US 2013/0294157 A1Published application
Reading data from multi-level cell memory
AssigneeSanDisk Technologies LLC
InventorsEran SHARON, Idan ALROD
Life of this patent
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Abstract
A method at a data storage device includes determining a first hard bit of a first logical page, the first hard bit corresponding to a particular cell of the MLC memory. A second hard bit of a second logical page is sensed. The second hard bit corresponds to the particular cell. The first hard bit is used as a soft bit of the second logical page to provide reliability information during a decode operation of the second logical page.
Claims24
A method comprising:
- in a data storage device having a multi-level cell (MLC) memory, performing:
- determining a first hard bit of a first logical page, the first hard bit corresponding to a particular cell of the MLC memory;
- sensing a second hard bit of a second logical page, the second hard bit corresponding to the particular cell;
- and
- using the first hard bit as a soft bit of the second logical page to provide reliability information during a decode operation of the second logical page.
2 more elements
A data storage device comprising:
- a multi-level cell (MLC) memory;
- and
- a controller configured to receive sensed information from the MLC memory, the sensed information corresponding to hard bits including a first hard bit of a first logical page of a particular cell of the MLC memory and a second hard bit of a second logical page of the particular cell, and to generate reliability information by using the first hard bit as a soft bit of the second logical page,
- wherein the controller is further configured to initiate a decode operation of the second logical page using the reliability information.
1 more element
Dependencies are inferred from the claim text.