Back to results
US 2013/0294142 A1Published application
Method for controlling the breakdown of an antifuse memory cell
AssigneeSTMicroelectronics S.r.l.
InventorsPhilippe Candelier, Joel Damiens, Elise Leroux
Life of this patent
Estimating the term…
Abstract
A method for controlling the breakdown of an antifuse memory cell formed on a semiconductor substrate, including the steps of: applying a programming voltage; detecting a breakdown time; and interrupting the application of the programming voltage at a time following the breakdown time by a post-breakdown time.
Claims14
A method, comprising:
- controlling an antifuse memory cell formed on a semiconductor substrate, the controlling including:
- applying a programming voltage to a terminal of the antifuse memory cell;
- detecting a breakdown in the antifuse memory cell, the detecting including detecting a current generated in the substrate;
- and
- interrupting the applying of the programming voltage after a time period after detecting the breakdown.
2 more elements
A device, comprising:
- a substrate having a well of a first conductivity type and a buried layer of a second conductivity type different from the first conductivity type, the well being on the buried layer;
- an antifuse memory cell formed on the semiconductor substrate, above the well surrounded by a peripheral insulator;
- a terminal coupled to the doped region;
- a detector configured to detect a substrate current on the terminal;
- and
- a first comparator configured to compare the substrate current with a first threshold.
3 more elements
A method, comprising:
- controlling an antifuse memory cell formed on a semiconductor substrate, the controlling including:
- applying a programming voltage to a terminal of the antifuse memory cell;
- detecting a bulk current;
- determining a breakdown end by detecting when the bulk current reaches a first threshold current;
- determining a post-breakdown end by detecting when the bulk current reaches a second threshold current;
- interrupting the applying of the programming voltage after the post-breakdown end.
3 more elements
Dependencies are inferred from the claim text.