Anti-fuse circuit in which anti-fuse cell data is monitored, and semiconductor device including the same

A semiconductor memory device, comprising:

• a memory cell array having a normal memory cell array connected to word lines and column selecting lines, and a spare memory cell array connected to spare word lines and spare column selecting lines;
• an anti-fuse array including one or more anti-fuse blocks each having a plurality of anti-fuse cells, the anti-fuse array configured to store anti-fuse program data;
• a selecting circuit configured to select anti-fuse program data of an anti-fuse block of the one or more anti-fuse blocks, and to output the selected anti-fuse program data at an output pad of the semiconductor memory device in response to a first selection signal generated based on a test mode command, when the anti-fuse program data is read from each of anti-fuse blocks through data buses;
• a column decoder configured to decode column address signals to generate column selection signals, and to provide the column selection signals to the column selecting lines;
• and
• a spare column decoder configured to decode the column address signals to generate spare column selection signals based on the anti-fuse program data, and to provide the spare column selection signals to the spare column selecting lines when a defect is generated in at least one column selecting line of the column selecting lines.

A method of reading anti-fuse program data of a semiconductor device including an anti-fuse array, the method comprising:

• transmitting anti-fuse program data from one or more anti-fuse blocks of the anti-fuse array to a data storage circuit through one or more data buses;
• storing the anti-fuse program data into the data storage circuit;
• selecting anti-fuse program data of one of the anti-fuse blocks;
• and
• outputting the selected anti-fuse program data at an output pad in response to a selecting signal,
• wherein outputting the selected anti-fuse program data at the output pad occurs while the selected anti-fuse program data is being transmitted to the data storage circuit.