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US 2013/0294128 A1Published application
Inverter circuit having a junction gate field-effect transistor
OwnerAdam Michael Whiteinventor
Life of this patent
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Abstract
An example inverter circuit assembly includes at least one first transistor device and at least one second transistor device. The second transistor device comprises a silicon carbide junction gate field-effect transistor. The at least one second transistor device is an inner transistor device relative to the at least one first transistor device.
Claims18
An inverter circuit assembly, comprising:
- at least one first transistor device;
- and
- at least one second transistor device comprising a silicon carbide junction gate field-effect transistor, wherein the at least one second transistor device is an inner transistor device relative to the at least one first transistor device.
An inverter system, comprising:
- an inverter having at least one inner transistor device and at least one outer transistor device, wherein the at least one inner transistor device comprises a normally-on transistor.
A method of converting DC power to AC power comprising:
- commutating the AC load current through combinations of normally-on and normally-off transistor devices of an inverter circuit.
Dependencies are inferred from the claim text.