Semiconductor device
AssigneeKabushiki Kaisha Toshiba
InventorToshiki Seshita
Life of this patent
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Abstract
According to one embodiment, a semiconductor device includes an interface, a power supply, a driver, and a switch section. The interface includes a first MOSFET and converts a terminal switch signal of input serial data into parallel data. The first MOSFET is provided on the SOI substrate and has a back gate in a floating state. The power supply includes a second MOSFET and generates an ON potential higher than a potential of a power supply to be supplied to the interface. The second MOSFET is provided on the SOI substrate and has a back gate connected to a source. The driver includes a third MOSFET and outputs a control signal for controlling the ON potential to be in a high level according to the parallel data. The third MOSFET is provided on the SOI substrate and has a back gate connected to a source.
Claims20
A semiconductor device, comprising:
- an interface including a first MOSFET having a first gate length and converting a terminal switch signal of input serial data into parallel data;
- a power supply including a second MOSFET having a second gate length which is longer than the first gate length;
- a driver including a third MOSFET having a third gate length which is longer than the first gate length;
- and
- a switch section switching connection between terminals.
Dependencies are inferred from the claim text.