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US 2013/0293255 A1Published application
Method for testing through-silicon-via
AssigneeNational Tsing Hua University
InventorsCheng-Wen Wu, Po-Yuan Chen, Ding-Ming Kwai, Yung- Fa Chou
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Abstract
A method for testing a TSV comprises charging a through-silicon-via under test to a first predetermined voltage level charging a capacitance device to a second predetermined voltage level; performing charge-sharing between the through-silicon-via and the capacitance device; and determining that the through-silicon-via under test is not faulty if the voltage level of the through-silicon-via after the charge-sharing step is within a predetermined range.
Claims7
A method for testing a through-silicon-via, comprising the steps of:
- charging a through-silicon-via under test to a first predetermined voltage level;
- charging a capacitance device to a second predetermined voltage level;
- performing charge-sharing between the through-silicon-via and the capacitance device;
- and
- determining that the through-silicon-via under test is not faulty if the voltage level of the through-silicon-via after the charge-sharing step is within a predetermined range.
2 more elements
Dependencies are inferred from the claim text.