# US 2013/0280910 A1 · Contact release capsule useful for chemical mechanical planarization slurry > Agents: this data is available as JSON from the patentgrep API and MCP server — see https://patentgrep.com/llms.txt - Number: US 2013/0280910 A1 - Document ID: US20130280910A1 - Status: Published application - Kind: A1 - Application number: 13/542,651 - Filed: 2012-07-05 - Published: 2013-10-24 - Earliest claimed: 2011-07-08 - Assignees: General Engineering & Research, L.L.C. - Inventors: Robin Ihnfeldt - Web page: https://patentgrep.com/patent/US20130280910A1 ## CPC - C09G 1/02: containing abrasives or grinding agents {(abrasives as such C09K3/14; polishing of semi-conductors H10P52/40)} - B01J 13/14: Polymerisation; cross-linking - B24B 1/00: Processes of grinding or polishing; Use of auxiliary equipment in connection with such processes - C08K 9/00: Use of pretreated ingredients - C08K 9/10: Encapsulated ingredients - C09C 1/02: Compounds of alkaline earth metals or magnesium {(C09C1/0003, C09C1/0009, C09C1/0015, C09C1/0078 take precedence; dolomitic solids C09C1/009)} - C09C 1/3063: {Treatment with low-molecular organic compounds} - C09G 1/00: Polishing compositions (French polish C09F11/00; detergents C11D) - C09G 1/04: Aqueous dispersions (C09G1/02 takes precedence) - C09K 3/1436: {Composite particles, e.g. coated particles} - C09K 3/1454: {Abrasive powders, suspensions and pastes for polishing} - C09K 3/1463: {Aqueous liquid suspensions} - C09K 13/00: Etching, surface-brightening or pickling compositions (for glass C03C15/00, {C03C25/66; for mortars, concrete, artificial or natural stone or ceramics C04B41/5338}; for metallic material C23F, C23G1/00, C25F1/00; {for semi-conductors H10P52/40}) - C09K 13/06: with organic material - C23F 3/00: Brightening metals by chemical means - H10P 52/402: {of semiconductor materials} - H10P 52/403: {of conductive or resistive materials} - H10W 20/062: {by smoothing of conductive parts, e.g. by planarisation} - C01P 2004/62: Submicrometer sized, i.e. from 0.1-1 micrometer - C01P 2004/64: Nanometer sized, i.e. from 1-100 nanometer - C01P 2006/14: Pore volume - C01P 2006/16: Pore diameter - C09G: POLISHING COMPOSITIONS (French polish C09F11/00); SKI WAXES - B01J: CHEMICAL OR PHYSICAL PROCESSES, e.g. CATALYSIS OR COLLOID CHEMISTRY; THEIR RELEVANT APPARATUS - B24B: MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING (grinding of gear teeth B23F, of screw-threads B23G1/36; by electro-erosion B23H; abrasive or related blasting B24C; tools for grinding, buffing or sharpening B24D; polishing compositions C09G1/00; abrasives C09K3/14; electrolytic etching or polishing C25F3/00; grinding arrangements for use on assembled railway tracks E01B31/17); DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS - C08K: Use of inorganic or non-macromolecular organic substances as compounding ingredients (paints, inks, varnishes, dyes, polishes, adhesives C09) - C09C: TREATMENT OF INORGANIC MATERIALS, OTHER THAN FIBROUS FILLERS, TO ENHANCE THEIR PIGMENTING OR FILLING PROPERTIES (treatment of materials specially adapted to enhance their filling properties in mortars, concrete or artificial stone C04B14/00, C04B18/00, C04B20/00); PREPARATION OF CARBON BLACK {; PREPARATION OF INORGANIC MATERIALS WHICH ARE NO SINGLE CHEMICAL COMPOUNDS AND WHICH ARE MAINLY USED AS PIGMENTS OR FILLERS} - C09K: MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE - C23F: NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE (working metal by laser beams B23K26/00; desurfacing by applying flames B23K7/00; working of metal by electro-erosion B23H; producing decorative effects by removing surface material, e.g. by engraving, by etching, B44C1/22; electrolytic etching or polishing C25F); INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL; MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLIC MATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASS C23 AND AT LEAST ONE PROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25 - H10P: GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10 - H10W: GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10 - C01P: INDEXING SCHEME RELATING TO STRUCTURAL AND PHYSICAL ASPECTS OF SOLID INORGANIC COMPOUNDS ## Abstract The invention relates to a contact release capsule comprising a particle, a chemical payload, and a polymer coating, wherein the particle is impregnated with the chemical payload, and the chemical payload is held inside the particle by the polymer coating until the contact release capsule contacts a surface and a shearing force removes the polymer coating allowing the chemical payload to release outside the particle. The contact release capsule is useful in chemical mechanical planarization slurries. Particularly, the contact release capsule may comprise a glycine impregnated silica nanoparticle coated with a polymer, wherein the contact release capsule is dispersed in an aqueous solution and used in the copper chemical mechanical planarization process. Use of the contact release capsule in a slurry for copper chemical mechanical planarization may significantly improve planarization efficiency, decrease unwanted etching and corrosion, and improve dispersion stability. ## Claims ### Claim 1 A contact release capsule comprising a particle, a chemical payload, and a polymer coating, wherein: the particle comprises a pore or pores which can be impregnated with a chemical payload, the chemical payload remains contained in the particle due to the polymer coating present on the outside surface of the particle, when the particle contacts a surface and a pre-specified shearing force occurs, the polymer coating is removed, and the chemical payload is free to move away from the particle and into the outside environment. ### Claim 2 (depends on 1) The contact release capsule of claim 1, wherein the particle is selected from the group consisting of fumed or colloidal silica, fumed or colloidal alumina, ceria, MnO2, ZnO, TiO, any polymer material, and/or combinations thereof. ### Claim 3 (depends on 1) The contact release capsule of claim 1, wherein the particle is spherical. ### Claim 4 (depends on 3) The contact release capsule of claim 3, wherein the size of the particle is in the range of about 10 nm to about 1 μm. ### Claim 5 (depends on 4) The contact release capsule of claim 4, wherein the particle has a porosity in the range of about 0.01 cm3/g to about 0.5 cm3/g. ### Claim 6 (depends on 5) The contact release capsule of claim 5, wherein the chemical payload comprises a complexing agent selected from the group consisting of an organic polymer, alkaline agent, or organic amine. ### Claim 7 (depends on 5) The contact release capsule of claim 5, wherein the chemical payload is a compound selected from the group consisting of glycine, ethylene-diamine-tetra-acetic-acid, alanine, phthalic acid, citric acid, oxalic acid, acetic acid, tartaric acid, succinic acid, amino acid, ammonium hydroxalate, lactic acid, carboxyl group, amine group, and/or combinations thereof. ### Claim 8 (depends on 7) The contact release capsule of claim 7, wherein the polymer coating comprises at least one moiety of a repeating unit selected from the group consisting of polyacrylate, polymethacrylate, polyethyleneglycol, poly-L-lysine, poly-vinyl alcohol, polysaccharides, polyethylene, polypropylene, poly-vinyl acetate, polyisoprene, and/or any combination thereof. ### Claim 9 (depends on 7) The contact release capsule of claim 7, wherein the polymer coating is poly(N-isopropylacrylamide) or poly(N-isopropylmethacrylamide). ### Claim 10 (depends on 9) The contact release capsule of claim 9, wherein the thickness of the polymer coating on the capsule is in the range of about 1 nm to about 1 μm. ### Claim 11 A slurry comprising a mixture of contact release capsules and a liquid solution, wherein the contact release capsules comprise a particle, a chemical payload, and a polymer coating, wherein: the particle comprises a pore or pores which can be impregnated with a chemical payload, the chemical payload remains contained in the particle due to the polymer coating present on the outside surface of the particle, when the particle contacts a surface and a pre-specified shearing force occurs, the polymer coating is removed, and the chemical payload is free to move away from the particle and into the outside environment, wherein the particle is selected from the group consisting of fumed or colloidal silica, fumed or colloidal alumina, ceria, MnO2, ZnO, TiO, any polymer material, and/or combinations thereof, wherein the polymer coating is poly(N-isopropylacrylamide) or poly(N-isopropylmethacrylamide). wherein the chemical payload is a compound selected from the group consisting of glycine, ethylene-diamine-tetra-acetic-acid, alanine, phthalic acid, citric acid, oxalic acid, acetic acid, tartaric acid, succinic acid, amino acid, ammonium hydroxalate, lactic acid, carboxyl group, amine group, and/or combinations thereof. wherein the particle has a porosity in the range of about 0.01 cm3/g to about 0.5 cm3/g. wherein the size of the particle is in the range of about 10 nm to about 1 μm. ### Claim 12 (depends on 11) The slurry of claim 11, wherein the liquid solution comprises water. ### Claim 13 (depends on 12) The slurry of claim 12, further comprising an acid or base to obtain the desired pH. ### Claim 14 (depends on 13) The slurry of claim 13, wherein the contact release capsules are dispersed into the liquid solution in a concentration of about 1 wt % to about 40 wt %. ### Claim 15 (depends on 14) The slurry of claim 14, further comprising an oxidizer selected from the group consisting of peroxide, oxalic acid, and/or combinations thereof. ### Claim 16 (depends on 15) The slurry of claim 15, further comprising a corrosion inhibitor selected from the group consisting of benzotriazole, 3-amino-triazole, potassium iodate, and/or combinations thereof. ### Claim 17 A method of planarizing and/or polishing a wafer surface comprising performing the chemical mechanical planarization process, wherein the slurry utilized in the process is the slurry comprising a mixture of contact release capsules and a liquid solution, wherein the contact release capsules comprise a particle, a chemical payload, and a polymer coating, wherein: the particle comprises a pore or pores which can be impregnated with a chemical payload, the chemical payload remains contained in the particle due to the polymer coating present on the outside surface of the particle, when the particle contacts a surface and a pre-specified shearing force occurs, the polymer coating is removed, and the chemical payload is free to move away from the particle and into the outside environment, wherein the particle is selected from the group consisting of fumed or colloidal silica, fumed or colloidal alumina, ceria, MnO2, ZnO, TiO, any polymer material, and/or combinations thereof, wherein the polymer coating is poly(N-isopropylacrylamide) or poly(N-isopropylmethacrylamide). wherein the chemical payload is a compound selected from the group consisting of glycine, ethylene-diamine-tetra-acetic-acid, alanine, phthalic acid, citric acid, oxalic acid, acetic acid, tartaric acid, succinic acid, amino acid, ammonium hydroxalate, lactic acid, carboxyl group, amine group, and/or combinations thereof. wherein the particle has a porosity in the range of about 0.01 cm3/g to about 0.5 cm3/g. wherein the size of the particle is in the range of about 10 nm to about 1 μm. ### Claim 18 (depends on 17) The method of claim 17, wherein the wafer surface to be planarized and/or polished comprises a metal, a metal oxide, an oxide, a nitride, a polymer material, and/or any combination thereof. ### Claim 19 (depends on 17) The method of claim 17, wherein the wafer surface comprises Copper, Tungsten, Tantalum, Tin, Tantalum nitride, Silicon nitride, Aluminum, Nickel, Nickel Phosphor, Nickel nitride, Silver, Gold, Platinum, Ruthenium, and/or any combination thereof. ### Claim 20 (depends on 17) The method of claim 17, wherein the wafer surface comprises tetraethylorthosilicate, Ni3Si4, silica, diamond, SiC, polysilicon, and/or any combination thereof. ### Claim 21 (depends on 17) The method of claim 17, wherein the chemical mechanical planarization process is Copper CMP, shallow trench isolation CMP, Tungsten CMP, interlayer dielectric CMP, or polysilicon CMP.