# US 2013/0280896 A1 · Apparatus for producing polycrystalline silicon and method therefor

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- Number: US 2013/0280896 A1
- Document ID: US20130280896A1
- Status: Published application
- Kind: A1
- Application number: 13/824,383
- Filed: 2011-09-21
- Published: 2013-10-24
- Earliest claimed: 2010-09-30
- Assignees: Jnc Corporation; Toho Titanium Co., Ltd.; JX Nippon Mining & Metals Corporation
- Inventors: Shuichi Ohkubo; Masatsugu Yamaguchi
- Web page: https://patentgrep.com/patent/US20130280896A1

## CPC

- H10P 72/04: {Apparatus for manufacture or treatment}
- C01B 33/033: by reduction of silicon halides or halosilanes with a metal or a metallic alloy as the only reducing agents
- H10P 14/3411: {Silicon, silicon germanium or germanium}
- H10P: GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- C01B: NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; {METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C}

## Abstract

To provide an apparatus for producing polycrystalline silicon and a method therefor to allow improvement in efficiency of polycrystalline silicon production by minimizing reactor downtime and to allow polycrystalline silicon production at a relatively low cost and in a large amount in a zinc reduction process for recovering formed silicon in a solid state. In a silicon producing apparatus for producing polycrystalline silicon by reducing silicon tetrachloride with zinc, vertical reactor 1 has reactor upper body 2 and reactor lower body 3 that can be vertically detached, and reactor lower body 3 is movable in up-and-down and left-right directions.

## Claims

### Claim 1

An apparatus for producing polycrystalline silicon by reducing silicon tetrachloride with zinc, the apparatus comprising a reactor constituted of a reactor upper body and a reactor lower body that can be vertically separated, wherein a zinc gas feed line and a silicon tetrachloride gas feed line are connected to an upper part of the reactor upper body, an outlet of a zinc chloride-containing exhaust gas generated in a reaction is arranged at a lower part of the reactor upper body, or at an upper part of the reactor lower body, and the reactor lower body is arranged movably in up-and-down and left-right directions.

### Claim 2 (depends on 1)

The apparatus for producing polycrystalline silicon according to claim 1, comprising a storage container for storing the polycrystalline silicon in the reactor lower body.

### Claim 3 (depends on 1)

The apparatus for producing polycrystalline silicon according to claim 1, wherein a carriage of which a mounting surface is movable in an up-and-down direction by a lifting means is arranged in the reactor lower body, and the reactor lower body is arranged to be movable in up-and-down and left-right directions by the carriage having the lifting means.

### Claim 4 (depends on 2)

The apparatus for producing polycrystalline silicon according to claim 2, comprising a transport mechanism that can transport the storage container in an up-and-down direction or a horizontal direction in a state in which the storage container is hung.

### Claim 5 (depends on 2)

The apparatus for producing polycrystalline silicon according to claim 2, wherein a polycrystalline silicon recovery means for recovering polycrystalline silicon from the storage container is arranged adjacently to the reactor.

### Claim 6 (depends on 1)

A method for producing polycrystalline silicon using the apparatus for producing polycrystalline silicon according to claim 1, the method comprising:
(1) a step for allowing a silicon tetrachloride gas to react with a zinc gas by using the reactor constituted by connecting the reactor upper body and the reactor lower body;
(2) a step for detaching a grown silicon body formed by the reaction from a vicinity of the silicon tetrachloride gas feed line;
(3) a step for separating and lowering the reactor lower body from the reactor upper body;
(4) a step for horizontally moving the reactor lower body by a predetermined distance; and
(5) a step for recovering polycrystalline silicon from the reactor lower body.