Wafer processing laminate, wafer processing member, temporary bonding arrangement, and thin wafer manufacturing method
AssigneeShin-Etsu Chemical Co., Ltd.
InventorsHideto Kato, Michihiro Sugo, Shohei Tagami, Hiroyuki Yasuda
Life of this patent
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Abstract
A wafer processing laminate is provided comprising a support (3), a temporary adhesive layer (2), and a wafer (1). The temporary adhesive layer (2) has a trilayer structure consisting of a first temporary bond layer (A) of thermoplastic siloxane bond-free polymer, a second temporary bond layer (B) of thermoplastic siloxane polymer, and a third temporary bond layer (C) of thermosetting modified siloxane polymer. In a peripheral region, the second layer (B) is removed so that the first layer (A) is in close contact with the third layer (C).
Claims23
A wafer processing laminate comprising a support, a temporary adhesive layer on the support, and a wafer laid contiguous to the temporary adhesive layer, the wafer having a circuit-forming front surface and a back surface to be processed,
- said temporary adhesive layer being a composite temporary adhesive layer having a trilayer structure consisting of a first temporary bond layer (A) of thermoplastic siloxane bond-free polymer which is releasably bonded to the front surface of the wafer, a second temporary bond layer (B) of thermoplastic siloxane polymer which is laid contiguous to a central region of the first temporary bond layer excluding a peripheral region, and a third temporary bond layer (C) of thermosetting modified siloxane polymer which is laid contiguous to the support, wherein in the peripheral region where the second temporary bond layer (B) is removed, a peripheral portion of the first temporary bond layer (A) is in close contact with a peripheral portion of the third temporary bond layer (C).
A wafer processing member comprising a support and a temporary adhesive layer on the support, wherein a wafer having a circuit-forming front surface and a back surface to be processed will be temporarily bonded to the temporary adhesive layer,
- said temporary adhesive layer being a composite temporary adhesive layer having a trilayer structure consisting of a first temporary bond layer (A) of thermoplastic siloxane bond-free polymer which can be releasably bonded to the front surface of the wafer, a second temporary bond layer (B) of thermoplastic siloxane polymer which is laid contiguous to a central region of the first temporary bond layer excluding a peripheral region, and a third temporary bond layer (C) of thermosetting modified siloxane polymer which is laid contiguous to the support, wherein in the peripheral region where the second temporary bond layer (B) is removed, a peripheral portion of the first temporary bond layer (A) is in close contact with a peripheral portion of the third temporary bond layer (C).
An arrangement for temporarily bonding a wafer to a support for wafer processing, the wafer having a circuit-forming front surface and a back surface to be processed,
- said temporary bonding arrangement being a composite temporary adhesive layer having a trilayer structure consisting of a first temporary bond layer (A) of thermoplastic siloxane bond-free polymer which can be releasably bonded to the front surface of the wafer, a second temporary bond layer (B) of thermoplastic siloxane polymer which is laid contiguous to a central region of the first temporary bond layer excluding a peripheral region, and a third temporary bond layer (C) of thermosetting modified siloxane polymer which can be laid contiguous to the support, wherein in the peripheral region where the second temporary bond layer (B) is removed, a peripheral portion of the first temporary bond layer (A) is in close contact with a peripheral portion of the third temporary bond layer (C).
A method for manufacturing a wafer processing laminate, the wafer processing laminate comprising a support, a temporary adhesive layer on the support, and a wafer laid contiguous to the temporary adhesive layer, the wafer having a circuit-forming front surface and a back surface to be processed,
- said method comprising the steps of:
- preparing a wafer component by forming a first temporary bond layer (A) of thermoplastic siloxane bond-free polymer on a wafer, the wafer component having the first temporary bond layer (A) being releasably bonded to the front surface of the wafer,
- preparing a support component by forming a third temporary bond layer (C) of thermosetting modified siloxane polymer on a support, forming a second temporary bond layer (B) of thermoplastic siloxane polymer on the third temporary bond layer (C), and removing a portion of the second temporary bond layer (B) which corresponds to a peripheral region of the wafer, using a solvent, and
- laminating together the wafer component and the support component.
A method for manufacturing a thin wafer by releasably bonding a wafer to a support via a bonding arrangement comprising a combination of a thermoplastic siloxane bond-free polymer layer (A), a thermoplastic siloxane polymer layer (B), and a thermosetting modified siloxane polymer layer (C), the wafer having a circuit-forming front surface and a non-circuit-forming back surface, with the circuit-forming surface facing the support, said method comprising the steps of:
- (a) forming polymer layer (C) on the support, forming polymer layer (B) on polymer layer (C), removing only a region of polymer layer (B) which corresponds to a peripheral region of the wafer, and forming polymer layer (A) on the wafer,
- (b) laminating together the support having polymer layers (C) and (B) formed thereon and the wafer having polymer layer (A) formed thereon in vacuum,
- (c) heat curing polymer layer (C),
- (d) grinding the non-circuit-forming surface of the wafer bonded to the support,
- (e) processing the non-circuit-forming surface of the wafer,
- (f) releasing the processed wafer from the support, and
- (g) optionally removing any bond layer from the circuit-forming surface of the wafer.
A method for manufacturing a thin wafer, comprising the steps of releasably bonding a wafer to a support via a bonding arrangement to form a laminate, the bonding arrangement comprising a combination of a thermoplastic siloxane bond-free polymer layer (A), a thermoplastic siloxane polymer layer (B), and a thermosetting modified siloxane polymer layer (C), the wafer having a circuit-forming front surface and a non-circuit-forming back surface, with the circuit-forming surface facing the support, processing the wafer, and releasing the processed wafer from the support,
- the step (f) of releasing the processed wafer from the support including
- (f-1) attaching a dicing tape to the processed surface of the wafer,
- (f-2) vacuum chucking the dicing tape-attached surface to a chuck surface,
- (f-3) releasing the support from the processed wafer by peel-off while keeping the chuck surface at a temperature in the range of 10 to 100° C., and
- (f-4) removing any bond layer from the circuit-forming surface of the wafer.
Dependencies are inferred from the claim text.