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US 2013/0280878 A1Published application
Semiconductor process
AssigneeUnited Microelectronics Corp.
InventorsTsai-Yu Wen, Tsuo-Wen Lu, Yu-Ren Wang
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Abstract
A semiconductor process includes the following steps. A gate structure is formed on a substrate. An oxide layer is formed and covers the gate structure and the substrate. A plasma process without oxygen is performed to densify the oxide layer. A material layer is formed and covers the oxide layer. The material layer and the oxide layer are etched to form a dual spacer.
Claims16
A semiconductor process, comprising:
- forming a gate structure on a substrate;
- forming an oxide layer covering the gate structure and the substrate;
- performing a plasma process without oxygen to densify the oxide layer;
- forming a material layer covering the oxide layer;
- and
- etching the material layer and the oxide layer simultaneously to form a dual spacer.
3 more elements
Dependencies are inferred from the claim text.