Method for synthesizing a material, in particular diamonds, by chemical vapor deposition, as well as device for applying the method

Method for forming a semiconductor of type Si—Ge by chemical vapour deposition, characterised in that the deposition is carried out in a chamber and in that it comprises:

• a chemical vapour deposition of silicon on a substrate at a temperature of between 500° C. to 600° C. in the presence of hydrogen and having the chamber maintained at a pressure situated between 0.01 and 1000 mbar, said deposition being carried out by injecting into the chamber a photon beam corresponding to the frequency of the phonon due to the Si—Si bond until the deposited layer of silicon has a thickness of at least 3 nm;
• stabilisation of the temperature of the substrate at a first temperature situated between 400° C. to 550° C.;
• a chemical vapour deposition of germanium on the layer of Si at a temperature of between 400° C. to 550° C. until a layer Ge is obtained at a predetermined thickness with injection into the chamber first of a photon beam corresponding to the frequency of the phonon due to the Si—Ge bond and secondly another photon beam corresponding to the frequency of the phonon due to the Ge—Ge bond;
• incrementation of the temperature of the chemical vapour deposition to a value situated between 750° C. and 850° C. in the presence of hydrogen;
• maintaining the injection of a photon beam corresponding to a frequency of the phonon due to the Ge—Ge bond until a predetermined thickness of layer is obtained.

Device synthesising a material, in particular diamond, by chemical vapour deposition (CVD), the material to be synthesised having a crystallography with a set of possible faces, represented by a set of directional vectors where each vector indicates a direction normal to a given face of said material, said device comprising a substrate arranged to carry the solid material to be synthesised and a vacuum chamber comprising a plasma generator arranged to produce a plasma in the chamber in the vicinity of the substrate, said chamber comprising an entry arranged to introduce into the chamber a substance carrying carbon, in particular a carbon-carrying gas, in particular CH4 or C2H2, and H2, said chamber being arranged to produce therein, from the carbon-carrying substance and H2, a gas comprising radicals or molecules in unsaturated form from which the synthesis of said material will be effected, characterised in that the device comprises a photon beam generator mounted on the chamber and arranged to produce energetic rays, in particular infrared rays and/or X, UV and visible rays in the form of a photon beam carrying quantities of energy determined by each of the frequencies corresponding to an absorption frequency taken from an electromagnetic absorption and inelastic diffusion spectrum of the solid material to be synthesised and which produces a reaction that leads to the formation of the solid material to be synthesised, said photon beam generator being mounted on the chamber so that said beam produced can be injected into the chamber at an angle that corresponds both to the given directional vectors of said solid material and to the wave vector of the Brillouin zone associated with the energy of the photon mode including the mode at the zone centre, determining the energy contained in the photon beam, said photon beam generator being mounted on the chamber in order to be able to inject the photon beam into the plasma and, for energetic states of the solid material, caused by said substance carrying reactive carbon atoms, an absorption of these photons having the energy corresponding to these phonic states.