# US 2013/0280660 A1 · Method of pattering nonmetal conductive layer

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- Number: US 2013/0280660 A1
- Document ID: US20130280660A1
- Status: Published application
- Kind: A1
- Application number: 13/592,330
- Filed: 2012-08-22
- Published: 2013-10-24
- Earliest claimed: 2012-04-20
- Assignees: Far Eastern New Century Corporation
- Inventors: Chien-Cheng CHANG; Yu-Chun CHIEN; Da-Shan LIN; Han-Hsiang LIN
- Web page: https://patentgrep.com/patent/US20130280660A1

## CPC

- G03F 7/40: Treatment after imagewise removal, e.g. baking
- B82Y 30/00: Nanotechnology for materials or surface science, e.g. nanocomposites
- G03F 7/038: Macromolecular compounds which are rendered insoluble or differentially wettable (G03F7/075 takes precedence; macromolecular azides G03F7/012; macromolecular diazonium compounds G03F7/021)
- G03F 7/325: {Non-aqueous compositions}
- G03F: PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR; (phototypographic composing devices B41B; photosensitive materials or processes for photographic purposes G03C; electrophotography, sensitive layers or processes therefor G03G)
- B82Y: SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES

## Abstract

A method of patterning a nonmetal conductive layer on a circuit board is provided. A nonmetal conductive layer and a negative photoresist layer are sequentially formed on a substrate of a circuit board. Then, the negative photoresist layer is exposed through a patterned photomask and then developed by a developing solution. Next, the nonmetal conductive layer is etched. The remained photoresist layer is finally removed by a non-alkaline stripper solution to obtain a patterned nonmetal layer on the substrate.

## Claims

### Claim 1

A method of patterning a nonmetal conductive layer, comprising:
forming a nonmetal conductive layer on a substrate;
forming a negative photoresist layer on the nonmetal conductive layer, wherein a material of the negative photoresist layer is cyclized polyisoprene, an alkali-soluble acrylic resin, a copolymer containing hydroxystyrene monomer, or any combinations thereof;
exposing the negative photoresist layer through a patterned photomask by a radiation light;
developing the negative photoresist layer by a developing solution, which is xylene, phenylethane, toluene, or a combination thereof;
etching the nonmetal conductive layer by an etching solution; and
removing the exposed negative photoresist layer by a non-alkaline stripper or a solvent stripper.

### Claim 2 (depends on 1)

The method of claim 1, wherein the substrate is made by a material of a polyester-based resin, a polyolefin-based resin, a polyvinyl-based resin, a cellulose ester, a polycarbonate-based resin, poly(vinyl acetate) and a derivative thereof, an acrylic resin, a polyamide, a polyimide, an am noplastic, a epoxide resin, a urethane, a polylsocyanurate, a furan resin, a silicone, a casesin resin, a cyclic thermoplastic, a fluorine-containing polymer, a polyethersulfone, or glass.

### Claim 3 (depends on 1)

The method of claim 1, wherein the substrate is made from a polyester-based resin.

### Claim 4 (depends on 3)

The method of claim 3, wherein the polyester-based resin is polyethylene terephthalate, or polyethylene naphthalate.

### Claim 5 (depends on 1)

The method of claim 1, wherein the nonmetal conductive layer is made from a carbon nanomaterial, a conductive polymer, or a combination thereof.

### Claim 6 (depends on 5)

The method of claim 5, wherein the carbon nanomaterial is carbon nanotube, carbon nanofiber, fullerene, graphene, or nano graphite.

### Claim 7 (depends on 6)

The method of claim 6, wherein the carbon nanotube is single-walled carbon nanotube, double-walled carbon nanotube, multi-walled carbon nanotube, or any combinations thereof.

### Claim 8 (depends on 6)

The method of claim 6, wherein a diameter and a length of the carbon nanotube is 1-50 nm and 1-20 μm, respectively.

### Claim 9 (depends on 5)

The method of claim 5, wherein the conductive polymer is polypyrrole, polyaniline, polythiophene, or any combinations thereof.

### Claim 10 (depends on 9)

The method of claim 9, wherein the conductive polymer is poly(3,4-ethylenedioxythiophene)-poly(styrenesulfonate).

### Claim 11 (depends on 1)

The method of claim 1, wherein a main component of the negative photoresist layer is cyclized polyisoprene.

### Claim 12 (depends on 1)

The method of claim 1, wherein the radiation light is UV light.

### Claim 13 (depends on 1)

The method of claim 1, wherein the dose of the radiation light is at most 100 mJ/cm2.

### Claim 14 (depends on 1)

The method of claim 1, wherein the etching solution is sodium hypochlorite, hydrogen peroxide, potassium permanganate, potassium dichromate, sodium hydroxide, potassium hydroxide, or any combinations thereof.

### Claim 15 (depends on 1)

The method of claim 1, wherein pH of the non-alkaline stripper is less than 7.

### Claim 16 (depends on 15)

The method of claim 15, wherein a main component of the non-alkaline stripper is sulfuric acid.

### Claim 17 (depends on 1)

The method of claim 1, wherein a main component of the solvent stripper is a mixture solution of alkylbenzene sulfonic acid and heavy aromatic solvent naphtha, or dodecyl benzenesulfonic acid.