# US 2013/0280554 A1 · Transparent conductive film and manufacturing method therefor

> Agents: this data is available as JSON from the patentgrep API and MCP server — see https://patentgrep.com/llms.txt

- Number: US 2013/0280554 A1
- Document ID: US20130280554A1
- Status: Published application
- Kind: A1
- Application number: 13/976,839
- Filed: 2011-12-16
- Published: 2013-10-24
- Earliest claimed: 2010-12-27
- Assignees: Nitto Denko Corporation
- Inventors: Yuka Yamazaki; Yoko Muraoka; Hironobu Machinaga; Tomotake Nashiki; Tsukasa Miyazaki
- Web page: https://patentgrep.com/patent/US20130280554A1

## CPC

- H01B 5/14: comprising conductive layers or films on insulating-supports
- C23C 14/024: {Deposition of sublayers, e.g. to promote adhesion of the coating (C23C14/027 takes precedence)}
- C23C 14/086: {of zinc, germanium, cadmium, indium, tin, thallium or bismuth}
- C23C 14/5806: {Thermal treatment}
- H01B: CABLES; CONDUCTORS; INSULATORS; SELECTION OF MATERIALS FOR THEIR CONDUCTIVE, INSULATING OR DIELECTRIC PROPERTIES (selection for magnetic properties H01F1/00; waveguides H01P {; printed circuits H05K})
- C23C: COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL (making metal-coated products by extrusion B21C23/22; covering with metal by connecting pre-existing layers to articles, see the relevant places, e.g. B21D39/00, B23K; metallising of glass C03C; metallising mortars, concrete, artificial stone, ceramics or natural stone C04B41/00; enamelling of, or applying a vitreous layer to, metals C23D; treating metal surfaces or coating of metals by electrolysis or electrophoresis C25D; single-crystal film growth C30B; by metallising textiles D06M11/83; decorating textiles by locally metallising D06Q1/04)

## Abstract

The present invention relates to a transparent conductive film which is excellent in dotting property under a heavy load and excellent in bending resistance. Provided is a transparent conductive film, comprising a flexible transparent base; and a transparent conductive layer formed on the flexible transparent base and including a crystalline indium/tin composite oxide, wherein a compressive residual stress of the transparent conductive layer is 0.4 to 2 GPa.

## Claims

### Claim 1

A transparent conductive film, comprising
a flexible transparent base; and
a transparent conductive layer formed on the flexible transparent base and including a crystalline indium/tin composite oxide,
wherein a compressive residual stress of the transparent conductive layer is 0.4 to 2 GPa.

### Claim 2 (depends on 1)

The transparent conductive film according to claim 1, wherein the transparent conductive layer is crystallized by heating, and a dimensional change in at least one direction in the plane with respect to a dimension before crystallization is −0.3% to −1.5%.

### Claim 3

A method for manufacturing a transparent conductive film comprising a flexible transparent base; and a transparent conductive layer formed on the flexible transparent base and including a crystalline indium/tin composite oxide, the method comprising
a base providing step of providing a flexible transparent base;
a film formation step of forming an amorphous transparent conductive layer including an amorphous indium/tin composite oxide on the flexible transparent base; and
a heat treatment step of heating the amorphous transparent conductive layer to be converted into a crystalline indium/tin composite oxide,
wherein in the heat treatment step, a compressive stress is given to the transparent conductive layer in at least one direction in the plane.

### Claim 4 (depends on 3)

The method for manufacturing a transparent conductive film according to claim 3, wherein in the heat treatment step, the transparent conductive layer is compressed so that a dimensional change in at least one direction in the plane is −0.3% to −1.5%.

### Claim 5 (depends on 3)

The method for manufacturing a transparent conductive film according to claim 3, wherein by giving the compressive stress, the crystalline transparent conductive layer is made to have a compressive residual stress of 0.4 to 2 GPa.

### Claim 6 (depends on 3)

The method for manufacturing a transparent conductive film according to claim 3, wherein in the heat treatment step, a heating temperature is 150° C. to 210° C., and a heating time is 150 minutes or less.