# US 2013/0280522 A1 · Surface treatment method for diamond-like carbon layer and coated article manufactured by the method > Agents: this data is available as JSON from the patentgrep API and MCP server — see https://patentgrep.com/llms.txt - Number: US 2013/0280522 A1 - Document ID: US20130280522A1 - Status: Published application - Kind: A1 - Application number: 13/655,645 - Filed: 2012-10-19 - Published: 2013-10-24 - Earliest claimed: 2012-04-20 - Inventors: DA-HUA CAO - Web page: https://patentgrep.com/patent/US20130280522A1 ## CPC - C23C 14/0605: {Carbon} - C23C 14/5846: {Reactive treatment} - Y10T 428/265: 1 mil or less - C23C: COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL (making metal-coated products by extrusion B21C23/22; covering with metal by connecting pre-existing layers to articles, see the relevant places, e.g. B21D39/00, B23K; metallising of glass C03C; metallising mortars, concrete, artificial stone, ceramics or natural stone C04B41/00; enamelling of, or applying a vitreous layer to, metals C23D; treating metal surfaces or coating of metals by electrolysis or electrophoresis C25D; single-crystal film growth C30B; by metallising textiles D06M11/83; decorating textiles by locally metallising D06Q1/04) - Y10T: TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION ## Abstract A surface treatment method for diamond-like carbon layer include at least the following steps: a substrate is provided; a diamond-like carbon layer is formed on the substrate by ion beam assisted magnetron sputtering deposition; fluorine ions and silicone ions is doped in the diamond-like carbon layer at a temperature of about 400° C. to about 600° C. A coated article manufactured by the method is also provided. ## Claims ### Claim 1 A surface treatment method for diamond-like carbon layer, comprising: providing a substrate; depositing a diamond-like carbon layer on the substrate by magnetron sputtering deposition; doping fluorine ions and silicone ions in the diamond-like carbon layer at a temperature of about 400° C. to about 600° C. ### Claim 2 (depends on 1) The surface treatment method of claim 1, wherein the substrate is made of stainless steel, high speed steel, copper, titanium alloy, or hard alloy. ### Claim 3 (depends on 1) The surface treatment method of claim 1, wherein during depositing of the diamond-like carbon layer, the substrate is mounted in a chamber of a magnetron sputtering deposition device, the device comprising graphite targets and a ion source; the graphite targets are applied a power between about 10 kW to about 18 kW; argon and carbon containing gases are first ionized by the ion source, and then fed into the chamber, the argon has a flow rate of about 150 sccm to about 200 sccm, the carbon containing gas has a flow rate of about 150 sccm to about 200 sccm; the ion source produces ion beams having energy of about 5 keV to about 30 keV and from about 30 mA to about 50 mA, a bias voltage applied to the substrate is between about −50 V and about −200 V, depositing the DLC layer takes about 180 minutes to 240 minutes. ### Claim 4 (depends on 3) The surface treatment method of claim 3, wherein the carbon containing gas is methane, acetylene, ethanol, or acetone. ### Claim 5 (depends on 3) The surface treatment method of claim 3, wherein the thickness of the DLC layer is about 2 μm to about 3 μm. ### Claim 6 (depends on 3) The surface treatment method of claim 3, wherein during the doping process, the internal temperature of the chamber is about 400° C. to about 600° C.; argon, silane, and carbon tetrafluoride are ionized by ion source, and then fed into the chamber; the argon has a flow rate of about 200 sccm to about 300 sccm, the silane has a flow rate of about 100 sccm to about 200 sccm, the carbon tetrafluoride has a flow rate of about 100 sccm to about 200 sccm; the ion source produces ion beams having energy of about 5 keV to about 30 keV and from about 20 mA to about 50 mA, the doping process lasts for about 1.6 hours to 2.5 hours. ### Claim 7 (depends on 6) The surface treatment method of claim 6, wherein the volume ratio of argon, silane, and carbon tetrafluoride is about 2:1:1 to about 3:2:2. ### Claim 8 (depends on 6) The surface treatment method of claim 6, further comprising a step of cooling the substrate after the doping process, during the cooling process, argon is fed into the chamber and keeps the pressure inside of the chamber at about 1.0×105 Pa to about 1.0×105 Pa, the internal temperature of the chamber is decreased from about 400° C.-600° C. to about 60° C.-70° C. in about 20 min to about 40 min. ### Claim 9 A coated article, comprising: a substrate; and a diamond-like carbon layer formed on the substrate, the diamond-like carbon comprising fluorine element and silicon element. ### Claim 10 (depends on 9) The coated article of claim 9, wherein the DLC layer contains silicon element, fluorine element and hydrogen element, and the total mass percentage of the silicon element, fluorine element and hydrogen element is about 1% to about 3%. ### Claim 11 (depends on 9) The coated article of claim 9, wherein the DLC layer has a thickness of about 2 lam to about 3 μm. ### Claim 12 (depends on 9) The coated article of claim 9, wherein the coated article further comprising a diffusing layer formed between the substrate and the DLC layer. ### Claim 13 (depends on 12) The coated article of claim 12, wherein the diffusing layer contains silicon carbide, iron carbide, silicon-iron solid solution, and fluorine-iron solid solution. ### Claim 14 (depends on 12) The coated article of claim 12, wherein the diffusing layer has a thickness of about 1 μm to about 2 μm. ### Claim 15 (depends on 9) The coated article of claim 9, wherein the substrate is made of stainless steel, high speed steel, copper, titanium alloy, or hard alloy.