Back to results
US 2013/0279246 A1Published application
Memory system and related method of operation
AssigneeSamsung Electronics Co., Ltd.
InventorsCHUL-HO LEE, SEIJIN KIM
Life of this patent
Estimating the term…
Abstract
A memory system comprises a nonvolatile memory and a phase change memory. The memory system can be operated by reading operation information of the nonvolatile memory from the phase change memory, adjusting voltage parameters of the nonvolatile memory based on the read operation information, and performing an operation of the nonvolatile memory based on the adjusted voltage parameters.
Claims20
A method of operating a memory system comprising a nonvolatile memory and a phase change memory, the method comprising:
- reading operation information of the nonvolatile memory from the phase change memory;
- adjusting voltage parameters of the nonvolatile memory based on the read operation information;
- and
- performing an operation of the nonvolatile memory based on the adjusted voltage parameters.
1 more element
A memory system, comprising:
- a nonvolatile memory;
- a phase change memory configured to store operation information of the nonvolatile memory;
- and
- a controller configured to adjust voltage parameters using the operation information stored in the phase change memory and to control the nonvolatile memory to perform a program, read, or erase operation according to the adjusted voltage parameters.
1 more element
A memory system, comprising:
- a controller configured to read operation information for a nonvolatile memory from a phase change memory, to adjust voltage parameters of the nonvolatile memory based on the read operation information, and control an operation of the nonvolatile memory based on the adjusted voltage parameters.
Dependencies are inferred from the claim text.