Power transistor partial current sensing for high precision applications

A power transistor module, comprising:

• a power transistor, including:
• a common first power node;
• a split control node with a first control segment and a second control segment;
• and
• a second power node, such that:
• said first control segment modulates current through a first portion of said power transistor, and said second control segment modulates current through a second portion of said power transistor, wherein a ratio of an area of said first transistor portion to a combined area of said first transistor portion and said second transistor portion is 5 percent to 75 percent;
• a first clip, said first clip being electrically connected to said second power node over said first portion of said power transistor;
• a second clip, said second clip being electrically connected to said second power node over said second portion of said power transistor;
• and
• a shunt, said shunt being electrically connected in series with said first transistor portion.