# US 2013/0278281 A1 · Semiconductor device including body connected fets

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- Number: US 2013/0278281 A1
- Document ID: US20130278281A1
- Status: Published application
- Kind: A1
- Application number: 13/922,854
- Filed: 2013-06-20
- Published: 2013-10-24
- Earliest claimed: 2011-01-03
- Assignees: International Business Machines Corporation
- Applicants: International Business Machines Corporation
- Inventors: Myung-Hee Na; Edward J. Nowak
- Web page: https://patentgrep.com/patent/US20130278281A1

## CPC

- G01R 31/2601: {Apparatus or methods therefor (G01R31/2607, G01R31/2642 take precedence)}
- G01R 31/2621: {for testing field effect transistors, i.e. FET's}
- G01R: MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES (indicating correct tuning of resonant circuits H03J3/12)

## Abstract

A semiconductor includes: a first field-effect transistor (FET); and a second FET of similar polarity to the first FET, wherein a body of the first FET is electrically coupled to a body of the second FET, and a source of the first FET is electrically coupled to a source of the second FET, such that a body voltage of the second FET controls a body voltage of the first FET.

## Claims

### Claim 1

A method of testing a field-effect transistor (FET), the method comprising:
providing a first field-effect transistor (FET) and a second FET, wherein the first FET and the second FET include similar polarities, and wherein a body of the first FET is electrically coupled to a body of the second FET, and a source of the first FET is electrically coupled to the source of the second FET, such that a body voltage of the second FET controls a body voltage of the first FET;
measuring a first drain current in a drain of the first FET;
measuring a second drain current in the drain of the first FET;
determining an effective current for the first FET based on an average of the first drain current and the second drain current.

### Claim 2 (depends on 1)

The method of claim 1, wherein a gate and a source of the second FET is electrically connected to a source of the first FET.

### Claim 3 (depends on 2)

The method of claim 2, wherein a drain of the second FET is electrically connected to a power supply voltage, such that the body voltage of the second FET is in an off-condition.

### Claim 4 (depends on 3)

The method of claim 3, wherein the body voltage of the first FET is in an off-condition.

### Claim 5 (depends on 2)

The method of claim 2, further comprising a plurality of FETs of similar polarity to the first FET, wherein a body of each of the plurality of FETs is electrically coupled to the body of the first FET, and a source of each of the plurality of FETs is electrically coupled to the source of the first FET.

### Claim 6 (depends on 5)

The method of claim 5, further comprising an operational amplifier electrically connecting the body of each of the plurality of FETs to the body of the first FET.

### Claim 7 (depends on 2)

The method of claim 2, further comprising applying a first voltage to the drain of the first FET and to a drain of the second FET, and applying a second voltage to a gate of the first FET, prior to measuring the first drain current.

### Claim 8 (depends on 7)

The method of claim 7, wherein the second voltage is approximately half of the first voltage.

### Claim 9 (depends on 8)

The method of claim 8, further comprising applying a third voltage to the drain of the first FET and the gate of the first FET, and applying a fourth voltage to the drain of the second FET, prior to measuring the second drain current.

### Claim 10 (depends on 9)

The method of claim 9, wherein the fourth voltage is approximately half of the third voltage.

### Claim 11 (depends on 1)

The method of claim 1, wherein the first FET and the second FET are n-type.

### Claim 12 (depends on 1)

The method of claim 1, wherein the first FET and the second FET are p-type.