Dipping solution for use in production of siliceous film and process for producing siliceous film using the dipping solution
AssigneeAZ Electronic Materials USA Corp.
InventorMasanobu HAYASHI
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Abstract
This invention relates to a dipping solution used in a process for producing a siliceous film. The present invention provides a dipping solution and a siliceous film-production process employing the solution. The dipping solution enables to form a homogeneous siliceous film even in concave portions of a substrate having concave portions and convex portions. The substrate is coated with a polysilazane composition, and then dipped in the solution before fire. The dipping solution comprises hydrogen peroxide, a foam-deposit inhibitor, and a solvent.
Claims20
An article comprised of a non-hardened polysilazane film on a substrate surface having concaved portions and convex portions in which the non-hardened polysilazane film is produced by dipping a polysilazane film in a dipping solution comprising of hydrogen peroxide, a foam-deposit inhibitor selected from the group consisting of 1 to 20 weight % alcohol, 0.1 to 20 weight % surfactant and a mixture thereof, and a solvent other than said alcohol, wherein the hydrogen peroxide is in the range of 30 to 60 weight % of the total amount of components and where the polysilazane film is heated in a non-hardening step after dipping.
A process for producing a fired siliceous film, comprising;
- i) a coating step, in which a substrate surface having concaved portions and convex portions is coated with a composition containing a polysilazane compound,
- ii) a dipping step, in which the coated substrate is dipped in a dipping solution comprising hydrogen peroxide, a foam-deposit inhibitor selected from the group consisting of 1 to 20 weight % alcohol, 0.1 to 20 weight % surfactant and a mixture thereof, and a solvent other than said alcohol, wherein the hydrogen peroxide is in the range of 30 to 60 weight % of the total amount of components,
- iii) a non-hardening heating step in which the dipped substrate is heated at a temperature lower than that of the hardening step temperature for a shorter time to produce a non-hardened polysilazane film,
- iv) a hardening heating step in which the non-hardened polysilazane film is heated at a higher temperature than the non-hardening step for a longer time to convert the non-hardened polysilazane film to a fired siliceous film.
Dependencies are inferred from the claim text.