Semiconductor structure and method of manufacturing the same

A semiconductor structure, comprising:

• a substrate;
• a well having a first conductive type and a well having a second conductive type being respectively formed in the substrate;
• a body region formed in the well having the second conductive type;
• a first doped region and a second doped region being respectively formed in the well having the first conductive type and the body region, wherein the second doped region and the first doped region has same polarities, and a dopant concentration of the second doped region is higher than a dopant concentration of the first doped region;
• a third doped region formed in the well having the second conductive type, and located between the first doped region and the second doped region, the third doped region and the first doped region have reverse polarities;
• and
• a field plate formed on a surface region between the first doped region and the third doped region, the field plate is made of poly silicon.

A manufacturing method of a semiconductor structure, the method comprising:

• providing a substrate;
• forming a well having a first conductive type and a well having a second conductive type in the substrate respectively;
• forming a body region in the well having the second conductive type;
• forming a first doped region and a second doped region in the well having the first conductive type and the body region respectively, wherein the second doped region and the first doped region has same polarities, and a dopant concentration of the second doped region is higher than a dopant concentration of the first doped region;
• forming a third doped region in the well having the second conductive type and between the first doped region and the second doped region, the third doped region and the first doped region have reverse polarities;
• and
• forming a first field plate on a surface region between the second doped region and the third doped region.