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US 2013/0277756 A1Published application
Semiconductor device and method of manufacturing the same
AssigneeFujitsu Semiconductor Limited
InventorsMakoto Kawano, Shigeki Yoshida
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Abstract
A method of manufacturing a semiconductor device includes: forming a recessed portion in a semiconductor substrate; forming an insulating film in the recessed portion; after forming the insulating film, forming a silicide layer on the semiconductor substrate in contact with the insulating film; and performing alignment between an electron beam exposure apparatus and the semiconductor substrate by using the insulating film and the silicide layer as an alignment mark.
Claims19
A method of manufacturing a semiconductor device, the method comprising:
- forming a recessed portion in a semiconductor substrate;
- forming an insulating film in the recessed portion;
- after forming the insulating film, forming a silicide layer on the semiconductor substrate in contact with the insulating film;
- and
- performing alignment between an electron beam exposure apparatus and the semiconductor substrate by using the insulating film and the silicide layer as an alignment mark.
2 more elements
A semiconductor device comprising:
- a semiconductor substrate having a recessed portion;
- an insulating film formed in the recessed portion;
- and
- a silicide layer in contact with the insulating film.
1 more element
Dependencies are inferred from the claim text.