Back to results
US 2013/0277755 A1Published application
High voltage switching device the method for forming thereof
AssigneeChengdu Monolithic Power Systems Co., Ltd.
InventorKun Yi
Life of this patent
Estimating the term…
Abstract
A high voltage switching device and associated method of manufacturing, the high voltage switching device having a substrate, an epitaxial layer, a source region, a drain region, a drift region, a gate oxide, a filed oxide, a gate and a snake shaped poly.
Claims14
A high voltage switching device, comprising:
- a substrate of a first doping type;
- an epitaxial layer formed on the substrate;
- a source region of the first doping type formed in the epitaxial layer;
- a drain region of a second doping type formed in the epitaxial layer;
- a drift region formed between the source region and the drain region;
- a gate oxide, part of the source region being covered by the gate oxide;
- a field oxide, wherein the epitaxial layer other than the part covered by the gate oxide is covered by the filed oxide;
- a gate formed on the gate oxide;
- and
- a snake shaped poly formed on the field oxide over the drift region, the snake shaped poly having a first end and a second end, the first end being contacted with the drain region, and the second end being close to the gate but being separated from the gate.
7 more elements
A method for forming a high voltage switching device, comprising:
- forming a substrate of a first doping type;
- forming an epitaxial layer of the first doping type on the substrate;
- forming a source region, a drain region and a drift region in the epitaxial layer, the drift region being placed between the source region and the drain region, the source region being of the first doping type, and the drain region being of a second doping type;
- forming a gate oxide and a field oxide on the epitaxial layer, part of the source region being covered by the gate oxide, and the epitaxial layer other than the part covered by the gate oxide being covered by the field oxide;
- forming a gate on the gate oxide, and forming a snake shaped poly on the field oxidation over the drift region, the snake shaped poly having a first end and a second end, the first end being contacted with the drain region, while the second end being close to the gate but being separated from the gate.
2 more elements
Dependencies are inferred from the claim text.