Semiconductor device and manufacturing method thereof
AssigneeRohm Co., Ltd.
InventorYuki NAKANO
Life of this patent
Estimating the term…
Abstract
A semiconductor device of the present invention includes a semiconductor layer composed of SiC, a metal layer directly bonded to one face of the semiconductor layer, and a high carbon concentration layer formed on a surface layer portion at one side of the semiconductor layer and containing more highly concentrated carbon than a surface layer portion of the other side. Further, a manufacturing method of a semiconductor device of the present invention includes the steps of forming, on a surface layer portion at one face side of a semiconductor layer composed of SiC, a high carbon concentration layer containing more highly concentrated carbon than a surface layer portion at the other face side by heat treatment and directly bonding metal to the high carbon concentration layer.
Claims24
A semiconductor device comprising:
- an SiC substrate;
- an epitaxial layer formed on the substrate;
- a junction layer formed on the SiC substrate on the opposite side of the epitaxial layer, the junction layer containing Si, C and elements other than Si and C, and the junction layer having a ratio of Si/C different from that of the SiC substrate;
- and
- a metal layer bonded to the junction layer.
Dependencies are inferred from the claim text.