Silicon photoelectric multiplier with optical cross-talk suppression due to properties of a substrate

A method for fabricating a cell for a silicon-based photoelectric multiplier, comprising:

• providing a substrate of a second conductivity type;
• and
• providing a first layer of a first conductivity type and a second layer of the second conductivity type,
• the first layer and the second layer forming a first p-n junction,
• the substrate configured such that in operation of the photoelectric multiplier from a quantity of light propagating towards a back side of the photoelectric multiplier, a negligible portion of the light internally returns to a front side of the photoelectric multiplier.

A cell for a silicon based photoelectric multiplier, comprising:

• a substrate of a second conductivity type;
• a first layer of a first conductivity type;
• and
• a second layer of the second conductivity type formed on the first layer, the first layer and the second layer forming a first p-n junction.