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US 2013/0277535 A1Published application
Solid-state image sensor and electronic device
AssigneeSony Corporation
InventorsKANEYOSHI TAKESHITA, KAZUKI NOMOTO
Life of this patent
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Abstract
There is provided a solid-state image sensor including a plurality of unit pixels arranged thereon, the plurality of unit pixels each including a light receiving section which stores a charge generated by photoelectric conversion, a signal storage section which is connected to the light receiving section and has a structure of a MOS capacitor, and a signal output section to which a gate electrode of the MOS capacitor is connected.
Claims12
A solid-state image sensor comprising:
- a plurality of unit pixels arranged thereon, the plurality of unit pixels each including
- a light receiving section which stores a charge generated by photoelectric conversion,
- a signal storage section which is connected to the light receiving section and has a structure of a MOS capacitor, and
- a signal output section to which a gate electrode of the MOS capacitor is connected.
1 more element
An electronic device comprising:
- a solid-state image sensor having a plurality of unit pixels arranged thereon, the plurality of unit pixels each including
- a light receiving section which stores a charge generated by photoelectric conversion,
- a signal storage section which is connected to the light receiving section and has a structure of a MOS capacitor, and
- a signal output section to which a gate electrode of the MOS capacitor is connected.
1 more element
Dependencies are inferred from the claim text.