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US 2013/0273690 A1Published application
Mixed valent oxide memory and method
AssigneeMicron Technology, Inc.
InventorGurtej S. Sandhu
Life of this patent
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Abstract
Memory devices and methods of forming include a mixed valent oxide located between a first electrode and a second electrode. Implantation of a metal below a surface of one of the electrodes allows formation of the mixed valent oxide with a direct interface to the electrode. An intermetallic oxide can be subsequently formed between the mixed valent oxide and the electrode by annealing the structure.
Claims20
A method, comprising:
- implanting metal ions below a surface of a platinum electrode;
- implanting oxygen below the surface of the platinum electrode;
- forming a mixed valent oxide on the surface of the platinum electrode;
- annealing to move the metal ions and oxygen from below the surface of the platinum electrode to an interface between the mixed valent oxide and the platinum electrode;
- and
- forming an intermetallic oxide at the interface.
3 more elements
A method of forming a memory device, comprising:
- forming a number of memory cells, including:
- implanting metal ions below a surface of a platinum electrode;
- forming a mixed valent oxide on the surface of the platinum electrode;
- annealing the device to move the metal ions from below the surface of the platinum electrode to an interface between the mixed valent oxide and the platinum electrode;
- forming an intermetallic oxide at the interface;
- and
- forming a second electrode over the mixed valent oxide.
4 more elements
A method of forming an information handling system, comprising:
- forming a memory device, including:
- implanting metal ions below a surface of a number of electrodes arranged in an array;
- forming a mixed valent oxide on the surface of the electrodes;
- annealing to move the metal ions from below the surface of the electrodes to an interface between the mixed valent oxide and the electrodes;
- forming an intermetallic oxide at the interface;
- forming a number of second electrodes over the mixed valent oxide;
- coupling a processor to the memory device;
- and
- coupling a display to the processor.
6 more elements
Dependencies are inferred from the claim text.